Investigation of the P-doped lead-free glass frit based on the principle of low-temperature phosphorus diffusion for multicrystalline silicon solar cells

Bo Zhou,Chunting Cui,Shenghua Ma,Jintao Bai,Hui Wang

DOI: https://doi.org/10.1016/j.solmat.2021.111193

IF: 6.9

2021-09-01

Solar Energy Materials and Solar Cells

Abstract:<p>For P-doped glass frits, the doping efficiency of phosphorus is low because of the volatility of phosphorus at high temperatures. A lead-free 5% P-doped glass frit was prepared using low-temperature phosphorus diffusion. The network structure formed by the glass was mainly composed of [BiO₆] octahedron, [SiO₄] tetrahedron, and [BO₄] tetrahedron. The pore size of the glass frit was distributed in the mesopore range. High-temperature microscopy confirmed that the glass frit began to soften at 620 °C. The glass frit was prepared into a front silver paste for multicrystalline silicon solar cells. The high efficiency of P₂O₅ doping helped resolve problematic defects caused by the typically poor doping efficiency of P-doping while forming the n-type emitter and p-n junction of solar cell. Finally, the solar cell photovoltaic conversion efficiency improved to 18.3%.</p>

materials science, multidisciplinary,physics, applied,energy & fuels