Abstract:Effective surface passivation is one of the primary prerequisites for high-efficiency silicon solar cells. In this paper, high-quality silicon dioxide (SiO2) films with excellent surface passivation abilities have been realized by thermal oxidation and plasma-enhanced chemical vapor deposition, respectively. By employing SiO2 capped with hydrogenated silicon nitride (SiNx:H) (SiO2/SiNx:H stacks) as the front passivation layers, the emitter saturation current density has been reduced from 90.5 fA/cm(2) to 62.3 fA/cm(2). We have successfully mass-produced thermal-oxidized p-type Czochralski-Si (CZ-Si) solar cells with high conversion efficiency (eta) of 20.1%, which is 0.2% absolutely higher than that of the conventional Al back surface field (Al-BSF) solar cells. With a rational design of process integration, we have further presented a cost-effective way to fabricate high-efficiency SiO2 passivated emitter and rear cells (PERCs) at an existing production line. The introduction of SiO2/SiNx:H stacks on the rear surface can effectively increase the long wavelength response and the rear surface recombination is also suppressed with a rather low surface recombination velocity of 26 cm/s achieved after a post-annealing process. The industrial SiO2 passivated p-type CZ-Si PERCs possess outstanding performances with the average eta of 21.3% and the highest eta of over 21.9%, absolute 1.3% increment in average eta compared with the conventional Al-BSF solar cells. Moreover, we have demonstrated that the relative low illumination response (below 50 W/m(2)) loss of our SiO2 PERCs over a day is extremely limited to be less than 0.2%.

Tuning Back Side Passivation for Enhancing the Performance of PERC Solar Cells

Optimization of Rear-Side Passivation for Enhancing the Performance of Bifacial PERC+ Solar Cells

Influence of Al2O3/SiNx Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells

Improved Al 2 O 3 / SiN x and SiO 2 / SiN x stack passivation layer structure PERC sc‐silicon solar cells on mass production line

Efficiency improvement of PERC solar cell using an aluminum oxide passivation layer prepared via spatial atomic layer deposition and post-annealing

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Application of SiO2 Passivation Technique in Mass Production of Silicon Solar Cells

Optimization of Controllable Factors in the Aluminum Silicon Eutectic Paste and Rear Silicon Nitride Mono-Passivation Layer of PERC Solar Cells

Monocrystalline Silicon PERC Solar Cell with Rear-Side AlOx Film Formed by Furnace Oxidation

Application of SiOxNy films in industrial bifacial PERC solar cells

Study on Annealing Process of Aluminum Oxide Passivation Layer for PERC Solar Cells

Towards High-Efficiency Industrial P-Type Mono-Like Si PERC Solar Cells

Industrail Technology of Passivated Emitter and Rear Cells with Silicon Oxynitride and Silicon Nitride As Rear Passivation for High Efficiency BIPV Modules

Effective Way to Reduce Rear-Side Potential-Induced Degradation of Bifacial PERC Solar Cells

Rear-Sided Passivation by SiN X :H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells

Crystalline Silicon PERC Solar Cell with Ozonized AlOx Passivation Layer on the Rear Side

Suppressing The Blistering of Silicon Nitride in PERC Solar Cells for High Industrial Yield

Light management of PERC solar cell with the front and back dielectric multilayers

Efficiency enhancement of perovskite solar cells based on Al2O3-passivated nano-nickel oxide film

Improvement of Light Trapping in Bifacial PERC Silicon Solar Cells by Optimizing the Rear Surface Morphology

High-Efficiency Silicon Inverted Pyramid-Based Passivated Emitter and Rear Cells