Abstract:An AlOx/SiNy dielectric stack was developed using an industrial plasma‐enhanced chemical vapor deposition system with low‐frequency plasma source for the surface passivation of undiffused textured p‐type crystalline silicon. The process integration of developed AlOx/SiNy stack is successfully demonstrated by fabricating p‐type back junction solar cells featuring a poly‐Si‐based passivating contact at the rear side. As the best cell efficiency, we achieve 24.2% with an open‐circuit voltage of 725 mV on a M2‐sized Ga‐doped p‐type Czochralski‐grown Si wafer. An aluminum oxide (AlOx)/silicon nitride (SiNy) dielectric stack was developed using an industrial plasma‐enhanced chemical vapor deposition (PECVD) system with low‐frequency (LF) plasma source for the surface passivation of undiffused textured p‐type crystalline silicon. The median recombination current density is 4.3 fA cm−2 as determined from photoconductance decay lifetime measurements and numerical device modeling. To the best of our knowledge, this is the first time to present a high‐quality LF‐PECVD AlOx/SiNy passivation stack on undiffused textured p‐type crystalline silicon wafers, which are cleaned with industrial processes using HF, HCl, and O3. The simulation agrees well with the measured effective carrier lifetime if the velocity parameters of 5.6 cm s−1 for holes and 803 cm s−1 for electrons are applied with a fixed negative charge density of −3 × 1012 cm−2. The process integration of developed AlOx/SiNy dielectric stack is successfully demonstrated by fabricating p‐type back junction solar cells featuring a poly‐Si‐based passivating contact at the cell rear side. As the best cell efficiency, we achieve 24.2% with an open‐circuit voltage of 725 mV on a M2‐sized Ga‐doped p‐type Czochralski‐grown Si wafer as independently confirmed by ISFH CalTeC.

Monocrystalline Silicon PERC Solar Cell with Rear-Side AlOx Film Formed by Furnace Oxidation

Crystalline Silicon PERC Solar Cell with Ozonized AlOx Passivation Layer on the Rear Side

Efficiency improvement of PERC solar cell using an aluminum oxide passivation layer prepared via spatial atomic layer deposition and post-annealing

Study on Annealing Process of Aluminum Oxide Passivation Layer for PERC Solar Cells

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Tuning Back Side Passivation for Enhancing the Performance of PERC Solar Cells

Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system

Influence of Al2O3/SiNx Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells

Improved Al 2 O 3 / SiN x and SiO 2 / SiN x stack passivation layer structure PERC sc‐silicon solar cells on mass production line

Optimization of Rear-Side Passivation for Enhancing the Performance of Bifacial PERC+ Solar Cells

Enhancement of the Conversion Efficiency of Selective Emitter PERC Solar Cells by Post-Oxidation

Oxide-nitride nanolayer stacks for enhanced passivation of p-type surfaces in silicon solar cells

Characterization of Al2O3 surface passivation of silicon solar cells

24.2% efficient POLO back junction solar cell with an AlOx/SiNy dielectric stack from an industrial‐scale direct plasma‐enhanced chemical vapor deposition system

Industrial High Throughput Emitter Formation and Thermal Oxidation for Silicon Solar Cells by the High Temperature Stack Oxidation Approach

Optimization of Controllable Factors in the Aluminum Silicon Eutectic Paste and Rear Silicon Nitride Mono-Passivation Layer of PERC Solar Cells

A Brief Review of Passivation Materials and Process for High Efficiency PERC Solar Cell

Efficient Silicon Solar Cells with Aluminum‐Doped Zinc Oxide‐Based Passivating Contact

Aluminum Oxide Deposited by Pulsed-DC Reactive Sputtering for Crystalline Silicon Surface Passivation

RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

Design and Fabrication of PERC-Like CdTe Solar Cells Using Micropatterned Al2O3 Layer