Abstract:The poly-Si carrier-selective passivating contacts (CSPCs) parasitically absorb a substantial amount of light, especially in the form of free carrier absorption. To minimize these losses, we developed CSPCs based on oxygen-alloyed poly-Si (poly-SiOx) and deployed them in c-Si solar cells. Transmission electron microscopy analysis indicates the presence of nanometer-scale silicon crystals within such poly-SiOx layers. By varying the O content during material deposition, we can manipulate the crystallinity of the poly-SiOx material and its absorption coefficient. Also, depending on the O content, the bandgap of the poly-SiOx material can be widened, making it transparent for longer wavelength light. Thus, we optimized the O alloying, doping, annealing, and hydrogenation conditions. As a result, an extremely high passivation quality for both n-type poly-SiOx (J0 = 3.0 fA/cm2 and iVoc = 740 mV) and p-type poly-SiOx (J0 = 17.0 fA/cm2 and iVoc = 700 mV) is obtained. A fill factor of 83.5% is measured in front/back-contacted solar cells with both polarities made up of poly-SiOx. This indicates that the carrier transport through the junction between poly-SiOx and c-Si is sufficiently efficient. To demonstrate the merit of poly-SiOx layers' high transparency at long wavelengths, they are deployed at the back side of interdigitated back-contacted (IBC) solar cells. A preliminary cell efficiency of 19.7% is obtained with much room for further improvement. Compared to an IBC solar cell with poly-Si CSPCs, a higher internal quantum efficiency at long wavelengths is observed for the IBC solar cell with poly-SiOx CSPCs, thus demonstrating the potential of poly-SiOx in enabling higher JSC.

Crystalline Silicon PERC Solar Cell with Ozonized AlOx Passivation Layer on the Rear Side

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Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Tuning Back Side Passivation for Enhancing the Performance of PERC Solar Cells

Influence of Al2O3/SiNx Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells

Improved Al 2 O 3 / SiN x and SiO 2 / SiN x stack passivation layer structure PERC sc‐silicon solar cells on mass production line

Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system

Study on Annealing Process of Aluminum Oxide Passivation Layer for PERC Solar Cells

Optimization of Rear-Side Passivation for Enhancing the Performance of Bifacial PERC+ Solar Cells

UV-Ozone Oxide layer for Junction Passivation and Passivating Contact Process of Silicon Solar Cells

Front Transparent Passivation of CIGS-Based Solar Cells via AZO

Suppressing The Blistering of Silicon Nitride in PERC Solar Cells for High Industrial Yield

Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cells

RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

TiO 2 Thin Films by Atmospheric Pressure Chemical Vapor Deposition for Rear Surface Passivation of p-PERT Solar Cells

Enhancement of the Conversion Efficiency of Selective Emitter PERC Solar Cells by Post-Oxidation

Efficient Silicon Solar Cells with Aluminum‐Doped Zinc Oxide‐Based Passivating Contact

Design and Optimization of SiOx/AZO Transparent Passivating Contacts for High‐Efficiency Crystalline Silicon Solar Cells

Highly effective passivation of crystalline silicon surfaces achieved through transparent conductive Al-doped ZnO layers

Conductive Passivator for Efficient Monolithic Perovskite/Silicon Tandem Solar Cell on Commercially Textured Silicon