Abstract:The Poly-Si/SiO x stack passivation structure incorporate doped polycrystalline silicon (Poly-Si) and tunneling silicon oxide (SiO x ) thin films allows for majority-carrier transport as well as block minority carriers and suppress recombination, and thus enable very high efficiency. Up to now the Poly-Si/SiO x stack passivation have been a widespread research topic for photovoltaic researchers, but most of the works are only focused on n-type doped structures and the rear side polished surface of the solar cells. In order to apply the Poly-Si/SiO x stack structure to the front textured surface and p + emitter region to obtain high-efficiency double-sided passivated contact solar cells and Si-based tandem cells in the future. In this work, passivation properties of Poly-Si/SiO x stack capped with SiN x :H layer are discussed based on different crystalline silicon surface morphologies, dopant types, doping profiles and thickness of Poly-Si layer. With proper doping process control, an excellent implied open-circuit voltage ( iVoc ) of 706 mV with a saturation current density ( J 0 ) value of 12 f A/cm 2 has been obtained for the boron-doped Poly-Si/SiO x stack capped with SiN x :H based on the textured surface, and an iVoc of 736 mV with a J 0 value of 2 f A/cm 2 has been acquired for the phosphorus-doped Poly-Si/SiO x stack capped with SiN x :H based on the acid polished surface. The results show that the polished surface and thinner Poly-Si layer are helpful for passivation. For the doped Poly-Si/SiO x stack structure, the doping source will penetrate the tunneling SiO x layer into the silicon bulk to form a certain penetration depth on the surface of the silicon substrate. In order to acquire the high iVoc (low J 0 ) value, a penetration depth of around 160 nm is needed to the phosphorus-doped Poly-Si/SiO x stack, while a penetration depth of less than 25 nm is required for boron-doped Poly-Si/SiO x stack. In addition, there is a linear relationship between the R sheet value and the reciprocal value of the Poly-Si (n + ) layer thickness.

Improved Al 2 O 3 / SiN x and SiO 2 / SiN x stack passivation layer structure PERC sc‐silicon solar cells on mass production line

Influence of Al2O3/SiNx Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells

Tuning Back Side Passivation for Enhancing the Performance of PERC Solar Cells

Optimization of Rear-Side Passivation for Enhancing the Performance of Bifacial PERC+ Solar Cells

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Efficiency improvement of PERC solar cell using an aluminum oxide passivation layer prepared via spatial atomic layer deposition and post-annealing

Optimization of Controllable Factors in the Aluminum Silicon Eutectic Paste and Rear Silicon Nitride Mono-Passivation Layer of PERC Solar Cells

Suppressing The Blistering of Silicon Nitride in PERC Solar Cells for High Industrial Yield

Oxide-nitride nanolayer stacks for enhanced passivation of p-type surfaces in silicon solar cells

Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system

The Passivation Characteristics of Poly-Si/SiOx Stack for High-Efficiency Silicon Solar Cells

High-Efficiency Silicon Inverted Pyramid-Based Passivated Emitter and Rear Cells

Crystalline Silicon PERC Solar Cell with Ozonized AlOx Passivation Layer on the Rear Side

Light management of PERC solar cell with the front and back dielectric multilayers

A solid strategy to realize heteroface selective emitter and rear passivated silicon solar cells

Passivated Emitter and Rear Cell Silicon Solar Cells with a Front Polysilicon Passivating Contacted Selective Emitter

24.2% efficient POLO back junction solar cell with an AlOx/SiNy dielectric stack from an industrial‐scale direct plasma‐enhanced chemical vapor deposition system

Industrial Silicon Solar Cells Applying the Passivated Emitter and Rear Cell (PERC) Concept—A Review

Monocrystalline Silicon PERC Solar Cell with Rear-Side AlOx Film Formed by Furnace Oxidation

Mitigated Front Contact Energy Barrier for Efficient and Stable Perovskite Solar Cells

Performance of Large Area n-TOPCon Solar Cells with Selective Poly-Si Based Passivating Contacts Prepared by PECVD Method