Abstract:Among all available photovoltaic (PV) technology options, c-Si based passivated emitter rear cell (PERC) has already proved its mettle by delivering more than 22% conversion efficiency at the industrial level. However, designing of PERC solar cell device remains a challenge owing to recombination and absorption losses, which eventually restrict the performance of the device toward achieving an Auger efficiency limit of 29.4%. The primary contributor to these losses is emitter recombination losses that limits the performance of PERC devices. The n + -emitter region in the proposed PERC devices is formed using ion implantation followed by a diffusion process. The impact of process variables such as dose (cm−2), energy (keV), diffusion time (s), and diffusion temperature (oC) on the PERC device performance is not much explored. Therefore, in an attempt to fulfill this research gap, the emitter region performance in terms of ion implantation of phosphorus, influence of local back surface field (BSF) doping concentration (1017 to 1019 cm−3), and back surface recombination velocity (SRV 101–107 cm/s) on PERC device performance followed by the loss analysis is examined in this work. An upright pyramid textured structure with constant height (5 μm) and industrial standard stacked dielectric anti-reflective coating layers, SiNX/SiO2 and Al2O3/SiNX at front and back side respectively is realized using different process statements such as deposit, etch, implantation, and diffusion with the help of a Silvaco TCAD software. Investigations reveal that the PERC device can deliver an efficiency of 22.8% with 150 μm boron-doped crystalline silicon (c-Si) wafer at an optimum phosphorous dose (5 × 1015 cm−2), BSF doping (1019 cm−3), and SRVn (107 cm/s). Short-circuit current density (JSC) of 40.8 mA/cm2, open-circuit voltage (VOC) of 0.686 V, and fill factor (FF) of 81.54% are obtained for the structure under consideration. A roadmap to achieve 23.5% conversion efficiency has also been reported by assuming a carrier selective contact at the backside with a surface recombination velocity of 10 cm/s.

Light management of PERC solar cell with the front and back dielectric multilayers

Optimization of Rear-Side Passivation for Enhancing the Performance of Bifacial PERC+ Solar Cells

Improvement of Light Trapping in Bifacial PERC Silicon Solar Cells by Optimizing the Rear Surface Morphology

Solution of Efficiency Loss in Thinned Silicon PERC Solar Cells

Tuning Back Side Passivation for Enhancing the Performance of PERC Solar Cells

Passivated Emitter and Rear Cell Silicon Solar Cells with a Front Polysilicon Passivating Contacted Selective Emitter

Effective Way to Reduce Rear-Side Potential-Induced Degradation of Bifacial PERC Solar Cells

Influence of Al2O3/SiNx Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells

Design Investigation on 100 Μm-Thickness Thin Silicon PERC Solar Cells with Assistance of Machine Learning

Improved Al 2 O 3 / SiN x and SiO 2 / SiN x stack passivation layer structure PERC sc‐silicon solar cells on mass production line

Efficient Light Management In Narrow-Bandgap Perovskite Solar Cells

Advanced Light Management for Encapsulated Silicon Solar Cells: An Antireflective Textured Film with a Down-Shifting Lead-free Perovskite Cs2AgxNa1- xBiyIn1- yCl6 Phosphor

Towards High-Efficiency Industrial P-Type Mono-Like Si PERC Solar Cells

Numerical study of mono-crystalline silicon solar cells with passivated emitter and rear contact configuration for the efficiency beyond 24% based on mass production technology

Pathway towards 24% efficiency for fully screen-printed passivated emitter and rear contact solar cells

22.8% efficient ion implanted PERC solar cell with a roadmap to achieve 23.5% efficiency: A process and device simulation study

Application of SiOxNy films in industrial bifacial PERC solar cells

Suppression of potential-induced degradation in monofacial PERC solar cells with gradient-designed capping layer

Omni-direction PERC solar cells harnessing periodic locally focused light incident through patterned PDMS encapsulation

Light management in highly-textured perovskite solar cells: From full-device ellipsometry characterization to optical modelling for quantum efficiency optimization

Characterization of 23-percent efficient silicon solar cells