Abstract:Among all available photovoltaic (PV) technology options, c-Si based passivated emitter rear cell (PERC) has already proved its mettle by delivering more than 22% conversion efficiency at the industrial level. However, designing of PERC solar cell device remains a challenge owing to recombination and absorption losses, which eventually restrict the performance of the device toward achieving an Auger efficiency limit of 29.4%. The primary contributor to these losses is emitter recombination losses that limits the performance of PERC devices. The n + -emitter region in the proposed PERC devices is formed using ion implantation followed by a diffusion process. The impact of process variables such as dose (cm−2), energy (keV), diffusion time (s), and diffusion temperature (oC) on the PERC device performance is not much explored. Therefore, in an attempt to fulfill this research gap, the emitter region performance in terms of ion implantation of phosphorus, influence of local back surface field (BSF) doping concentration (1017 to 1019 cm−3), and back surface recombination velocity (SRV 101–107 cm/s) on PERC device performance followed by the loss analysis is examined in this work. An upright pyramid textured structure with constant height (5 μm) and industrial standard stacked dielectric anti-reflective coating layers, SiNX/SiO2 and Al2O3/SiNX at front and back side respectively is realized using different process statements such as deposit, etch, implantation, and diffusion with the help of a Silvaco TCAD software. Investigations reveal that the PERC device can deliver an efficiency of 22.8% with 150 μm boron-doped crystalline silicon (c-Si) wafer at an optimum phosphorous dose (5 × 1015 cm−2), BSF doping (1019 cm−3), and SRVn (107 cm/s). Short-circuit current density (JSC) of 40.8 mA/cm2, open-circuit voltage (VOC) of 0.686 V, and fill factor (FF) of 81.54% are obtained for the structure under consideration. A roadmap to achieve 23.5% conversion efficiency has also been reported by assuming a carrier selective contact at the backside with a surface recombination velocity of 10 cm/s.

Solution of Efficiency Loss in Thinned Silicon PERC Solar Cells

Design Investigation on 100 Μm-Thickness Thin Silicon PERC Solar Cells with Assistance of Machine Learning

Investigation on Significant Efficiency Enhancement of Thin Crystalline Silicon Solar Cells

Light management of PERC solar cell with the front and back dielectric multilayers

Efficiency Limit Analysis of 10 m Silicon Thin Film Solar Cells

Realization of 13.6% Efficiency on 20 μm Thick Si/Organic Hybrid Heterojunction Solar Cells via Advanced Nanotexturing and Surface Recombination Suppression

Tackling Energy Loss for High-Efficiency Organic Solar Cells with Integrated Multiple Strategies.

Characterization of 23-percent efficient silicon solar cells

Ultrathin Bifacial Passivated Emitter and Rear Cell with Inverted Pyramid Textures

Thin heterojunction a-Si:H photovoltaic cell design with no doped a-Si:H layers

22.8% efficient ion implanted PERC solar cell with a roadmap to achieve 23.5% efficiency: A process and device simulation study

Passivated Emitter and Rear Cell Silicon Solar Cells with a Front Polysilicon Passivating Contacted Selective Emitter

Towards High-Efficiency Industrial P-Type Mono-Like Si PERC Solar Cells

Towards the efficiency limits of silicon solar cells: how thin is too thin?

Reducing Perovskite/C60 Interface Losses via Sequential Interface Engineering for Efficient Perovskite/Silicon Tandem Solar Cell

Pathway towards 24% efficiency for fully screen-printed passivated emitter and rear contact solar cells

Optimization of Rear-Side Passivation for Enhancing the Performance of Bifacial PERC+ Solar Cells

Efficient Light Management In Narrow-Bandgap Perovskite Solar Cells

Improving thin-film crystalline silicon solar cell efficiencies with photonic crystals

Low‐Cost Strategy for High‐Efficiency Bifacial Perovskite/c‐Si Tandem Solar Cells

Tuning Back Side Passivation for Enhancing the Performance of PERC Solar Cells