Abstract:Herein, the effect of the Al2O3 rear interface passivation layer on the performance of kesterite solar cells with F:SnO2 back contact is reported. The results show that Al2O3 passivation significantly improves the performance of the Cu2ZnSnS(4‐X)Se(x) (CZTSSe) based solar cells. Passivated devices achieved 4.6% efficiency and better external quantum efficieny compared to nonpassivated ones with 1.5% efficiency. Herein, ultrathin Al2O3 is investigated as a rear interface passivation layer for kesterite solar cells with F:SnO2 (FTO) back contact for potential performance improvement. On the passivation layer, a thin Mo layer is deposited to improve the FTO's ohmicity. Further, NaF is evaporated on the copper zinc tin sulfide (CZTS) precursors to create openings at the passivation layer and achieve Na‐induced benefits in the absorber. The CZTS absorbers deposited directly on the Al2O3‐coated FTO peel off, while those with Mo interlayer do not. For pure sulfide kesterite devices, the Al2O3 layer reduces the short‐circuit current density (JSC), resulting in poor device efficiency. On the other hand, significantly higher JSC is realized for mixed sulfide and selenide kesterite devices with Al2O3 passivation layer, with the current density–voltage curve suggesting a reduced barrier height at the rear interface. As a result, the efficiency is improved from 1.5% for devices without Al2O3 to 4.6% for those with Al2O3. Likewise, improved external quantum efficiency response is observed in the devices with passivation layer for backside and frontside illumination. Therefore, contribution of Al2O3 passivation layer to the performance of kesterite‐based solar cells is evident from the results of this study.

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