A Brief Review of Passivation Materials and Process for High Efficiency PERC Solar Cell

Jaeun Kim,Sunhwa Lee,Sanchari Chowdhury,Junsin Yi

DOI: https://doi.org/10.1007/s42341-021-00366-5

2021-10-07

Transactions on Electrical and Electronic Materials

Abstract:PERC technology is the dominant over the last decade in global photovoltaic market due to its lower cost and higher efficiency. Research works are still counting to reduce recombination loss and the passivation layer is key issue for reducing recombination and improving efficiency. This paper tried to obtain the optimized passivating contact properties and deposition techniques by introducing high-k Hafnium oxide (HfOx) material for high efficiency PERC solar cell. HfOx is not only used as monolayer, but also used as doped with other materials or used with SiNx:H capping layer. However, in order to compare the properties with other materials, this paper only mentions the single layer properties. A comparative analysis of interface trap density, fixed charge and lifetime was performed which are key properties to obtain higher passivation. It was confirmed that HfOx deposited using ALD has a low interface trap density (Dit) of less than 2.0×1012 eV−1 cm−2, and can be adjusted to negative and positive fixed charge by deposition conditions or post-treatment process. As a result of simulation using HfOx as a passivation layer, the efficiency is 22.01%. It is expected that it will be possible to manufacture a solar cell with higher efficiency if the actual cell is fabricated by optimizing HfOx as a passivation layer based on the simulation result.