Abstract:Surface passivation by double layers made of hydrogenated amorphous silicon (a-Si:H) and hydrogenated silicon nitride (SiNx) on float zone n-type Si substrates was investigated. The thickness of the a-Si:H layers was varied from 0 to 4nm and they were deposited at low temperature by plasma-enhanced chemical vapour deposition. The structure and composition of the double layers was determined by a combination of spectroscopic ellipsometry and glow discharge optical emission spectroscopy. The minority carrier effective lifetime and the uniformity of the surface passivation of the wafers were measured by calibrated photoluminescence imaging. The lifetime was observed to increase with increasing a-Si:H thickness. An excellent lifetime value of 7.3ms was measured on the double layers with an a-Si:H layer thickness of 3.4nm, corresponding to surface recombination velocity below 2cm/s. Capacitance-voltage and conductance-voltage measurements were used to determine the densities of fixed charge and interface states at the interface between the Si substrate and the a-Si:H/SiNx stacks. The fixed charge density of the initial SiNx was positive, as expected. However, the overall fixed charge density of the double layers was observed to decrease when a layer of a-Si:H was inserted beneath the SiNx, and eventually reaches negative values when the a-Si:H thickness exceeds 2nm. The conductance-voltage measurements revealed that the interface state density (Dit) is significantly lowered when adding the ultrathin a-Si:H film between the substrate and the SiNx layer, providing a significant improvement of the chemical passivation, thus reducing the overall surface recombination velocity.

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

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Effects of Chamber Pressures on the Passivation Layer of Hydrogenated Nano-Crystalline Silicon Mixed-Phase Thin Film by Using Microwave Annealing

Surface Passivation of Crystalline Silicon by A-Si:H Thin Films

Improved Amorphous/crystalline Silicon Interface Passivation for Silicon Heterojunction Solar Cells by Hot-Wire Atomic Hydrogen During Doped A-Si:H Deposition

Temporal Stability of A-Si:H and A-Sinx:H on Crystalline Silicon Wafers

Demonstration of Excellent Crystalline Silicon Surface Passivation (S < 1.27 cm/s) by High‐Rate DC‐Sputtered Hydrogenated Amorphous Silicon

Thermal stability of hydrogenated amorphous silicon passivation for p‐type crystalline silicon

Effective Interface Pretreatment For Amorphous-Crystalline Silicon Heterojunction Solar Cells

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Surface Passivation Properties of ${\textrm{hfo}}_{2}$ Thin Film on N-Type Crystalline Si

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Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Improved passivation effect at the amorphous/crystalline silicon interface due to ultrathin SiOx layers pre-formed in chemical solutions

Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells

Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films

Double Layers of Ultrathin A-Si:H and SiNx for Surface Passivation of N-Type Crystalline Si Wafers

Improving stability of amorphous silicon using chemical annealing with helium

High temperature annealing of hydrogenated amorphous silicon carbide thin films