Abstract:The positive roles of H-2-plasma treatment (HPT) have been investigated by using different treatment procedures in view of the distinctly improved passivation performance of amorphous-crystalline silicon heterojunctions (SHJs). It has been found that a hydrogenated amorphous silicon thin film and crystalline silicon (a-Si: H/c-Si) interface with a high stretching mode (HSM) is detrimental to passivation. A moderate pre-HPT introduces atomic H, which plays an effective tuning role in decreasing the interfacial HSM; unfortunately, an epitaxial layer is formed. Further improvement in passivation can be achieved in terms of increasing the HSM of a-Si: H film treated by appropriate post-HPT based on the a-Si: H thickness. The minority carrier lifetime of crystalline wafers can be improved by treated films containing a certain quantity of crystallites. The microstructure factor R and the maximum intensity of the dielectric function epsilon(2max) have been found to be critical microstructure parameters that describe high-quality a-Si: H passivation layers, which are associated with the amorphous-to-microcrystalline transition phase induced by multi-step HPT. Finally, the open circuit voltage and conversion efficiency of the SHJ solar cell can be improved by implementing an effective HPT process.

Effects of hydrogen plasma annealing on the luminescence from a-Si:H/SiO2 and nc-Si/SiO2 multilayers

Characteristics of Luminescent Nc-Si/sio 2 Multilayers and the Influence of Annealing in Hydrogen

Hydrogen-Induced Recovery Of Photoluminescence From Annealed A-Si : H/A-Sio2 Multilayers

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Enhancement and Stability of Photoluminescence from Si Nanocrystals Embedded in A Sio2 Matrix by H-2-Passivation

Influence of hydrogen passivation on the luminescence of Si quantum dots embedded in Si3Nx

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

Enhanced Luminescence from Si Quantum Dots/sio2 Multilayers by Hydrogen Annealing

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Effect of annealing on photoluminescence of passivated porous silicon

Contribution of Multiple Emitting Centers to Luminescence from Si/SiO2 Multilayers with Step by Step Thermal Annealing

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

Effect of the hydrogen annealing on the properties of Mo/CuIn1-xGaxSe2/CdS solar cells junction

Hydrogen Passivation Effect On Enhanced Luminescence From Nanocrystalline Si/Sio2 Multilayers

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Preparation of amorphous carbon films by layer-by-layer hydrogen plasma annealing method and their luminescence properties

Investigation of positive roles of hydrogen plasma treatment for interface passivation based on silicon heterojunction solar cells