Effect of the hydrogen annealing on the properties of Mo/CuIn1-xGaxSe2/CdS solar cells junction

Hui Zhang,Shaolin Ding,Huixiang Tang,Huirui Zhang,Xiangyang Ma,Deren Yang,Weiyi Liu,Jiayou Zhang,Yun Sun
2004-01-01
Abstract:Mo/CuIn1-xGaxSe2/CdS (CIGS) solar cells junction were annealed at 500°C in H2 and N2 for various period of time, respectively. Then the effects of hydrogen and nitrogen annealing on structure, morphology, and electrical properties of thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and I-V curve. It was indicated that the turn-on voltage of p-n junction of CIGS decreased and the properties of p-n junction improved after annealing in H2 at 500°C with various period of time so that the efficiency of the solar cells could be increased. Meanwhile, the size of large particles on the surface of the CIGS samples decreased with the increase of the annealing time and the formation of CuIn0.7Ga0.3Se phase was enhanced. However, for the CIGS samples with annealing in N2 at 500'C or without annealing, there are no obvious effect of annealing on the I-V properties of the CIGS samples. It is considered that the improvement of the CIGS junction performance is not due to the normal annealing but the hydrogen passivation.
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