The effects of annealing temperature on CIGSeS solar cells by sputtering from quaternary target with H2S post annealing

XY Lyu,DM Zhuang,M Zhao,N Zhang,XP Yu,L Zhang,RJ Sun,YW Wei,X Peng,YX Wu,GA Ren,JQ Wei
DOI: https://doi.org/10.1016/j.apsusc.2018.12.224
IF: 6.7
2019-01-01
Applied Surface Science
Abstract:•Annealing at temperature over 500 °C benefits diffusion of S atoms into absorbers.•Annealing in S-containing atmosphere leads to an increase in efficiency of 13.9%.•Ga tends to diffuse towards absorber surface in S-containing atmosphere at 550 °C.•Increase of Ga and S at the surface introduces the band gap gradient and improved efficiency.
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