Abstract:Sulphurization processes in Cu(In,Ga)Se$_2$ thin-film solar cells has been intensively studied in the last decade as a viable alternative to the existing Ga-grading. The main advantage of using S grading is that by substituting Se with S we will achieve not only an upshift of the conduction-band minimum as done by employing Ga grading, but also a downshift of the valence-band maximum. Several existing studies stipulate that S is very often inserted in too high concentrations into Cu(In,Ga)Se$_2$ absorber by sulphurization resulting in a deteriorated device performance instead of the expected beneficial effect. However, we demonstrate here that the intense sulphurization process when accompanied by Ga-grading leads to improved electrical properties of the buffer/absorber heterojunction. More exactly, this double grading at the absorber surface leads to strong reduction of the p-doping and hence to a change in the band diagram. This work also proves that the intense sulphurization process is accompanied by strong structural and chemical changes, i.e., by the formation of a S-rich CuIn(S,Se)$_2$ compound at the absorber surface. Finally, all these experimental findings were complemented by ab-initio calculations of the conduction-band and valence-band offsets between absorber and buffer obtained by using density functional theory. Hence, the present work opens up new possibilities for synthesizing Cu(In,Ga)(Se,S)2 solar cells with superior cell performance when using an intense sulphurization process.

Influences of Sulfurization on Performances of Cu(In,Ga)(Se,S)2 Cells Fabricated Based on the Method of Sputtering CIGSe Quaternary Target

Influences of Ga Concentration on Performances of CuInGaSe2 Cells Fabricated by Sputtering-Based Method with Ceramic Quaternary Target

Preparation of Wide Bandgap CuGaSe2 Absorbers and Solar Cells by Sputtering a Selenium-Rich Ceramic Target and Annealing in a Selenium-Free Atmosphere

Preparation and Characterization of Cu(In, Ga) (se, S)(2) Thin Films by Sulfurization of Electrodeposited, Cu(In,Ga)Se-2 Precursors

Preparation of wide bandgap CuGaSe 2 absorbers and solar cells by sputtering a selenium-rich ceramic target and annealing in a selenium-free atmosphere

Cu(In,Ga)Se-2 Solar Cells Fabricated by Sputtering from Copper-Poor and Selenium-Rich Ceramic Target with Selenium-Free Post Treatment

The effects of annealing temperature on CIGSeS solar cells by sputtering from quaternary target with H2S post annealing

CIGS formation by high temperature selenization of metal precursors in H 2 Se atmosphere

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

13.6%-Efficient Cu(In,Ga)Se-2 Solar Cell with Absorber Fabricated by Rf Sputtering of (In,ga)(2)se-3 and Cu Se Targets

The Effects of Annealing Temperature on CIGS Solar Cells by Sputtering from Quaternary Target with Se-free Post Annealing

Preparation and characterization of Cu(In, Ga)(Se, S)2 thin films by sulfurization of electrodeposited Cu(In, Ga) Se2

The Effects of Selenium Content on Cu(Inga)Se-2 Thin Film Solar Cells by Sputtering from Quaternary Target with Se-Free Post Annealing

The Relationships Between Electronic Properties and Microstructure of Cu(In,Ga)Se-2 Films Prepared by Sputtering from A Quaternary Target

Influence of H2Se Concentration on Se-rich CZTSSe Absorbers Sputtered with a Ceramic Quaternary Target

Improving the Performance of Solution-Based CZTSSe Absorber by Selenization Annealing with Selenium Powder in Argon

Preparation and Properties of CuInxGa1−xSe2thin-film Solar Cell Absorbers from Selenization of Ga-rich Electrodeposited Precursors

Cu(In,Ga)Se-2 Thin Films Annealed with SnSe2 for Solar Cell Absorber Fabricated by Magnetron Sputtering

Properties of CuInxGa1−xSe2 Thin Films Grown from Electrodeposited Precursors with Different Levels of Selenium Content

Cesium Modulation in Cu(In, Ga)(S, Se) 2 Solar Cells: Comprehensive Analysis on Interface, Surface, and Grain Boundary

Intense sulphurization process can lead to superior heterojunction properties in Cu(In,Ga)(S,Se)$_2$ thin-film solar cells