Abstract:CuGaSe 2 (CGSe) material possesses a wide bandgap of approximately 1.7 eV, making it a promising prospect for top cells in tandem solar cells. Depositing CGSe precursor films by magnetron sputtering of a selenium-rich ceramic target is easy to operate and control. After annealing the precursor films at different temperatures in a selenium-free argon atmosphere, avoiding the use of toxic H 2 Se. To achieve an absorber exhibiting appropriate performance, the morphologies, phase composition, absorption characteristics, roughness, lattice structure, and work function of CGSe absorbers annealed at different temperatures were investigated. The CGSe absorber annealed at 550 °C showed uniform grain, a single-phase composition, high absorbance, flat surface, and compact crystal structure. The absorber annealed at excessive temperature led to the formation of Cu 2-x Se, inducing defects and carrier recombination. The work function of CGSe absorber annealed at 590 °C increases, resulting in the misalignment of its band with the Mo back contact. The enhancement of absorber contributes positively to solar cell device performance. CGSe solar cells prepared using the absorber annealed at 550 °C exhibited excellent photoelectric properties. The increase in minority carrier lifetime and recombination resistance improves the transport characteristics of carriers.

The Effects of Selenium Content on Cu(Inga)Se-2 Thin Film Solar Cells by Sputtering from Quaternary Target with Se-Free Post Annealing

The Effects of Annealing Temperature on CIGS Solar Cells by Sputtering from Quaternary Target with Se-free Post Annealing

Cu(In,Ga)Se-2 Solar Cells Fabricated by Sputtering from Copper-Poor and Selenium-Rich Ceramic Target with Selenium-Free Post Treatment

The Relationships Between Electronic Properties and Microstructure of Cu(In,Ga)Se-2 Films Prepared by Sputtering from A Quaternary Target

Influences of Ga Concentration on Performances of CuInGaSe2 Cells Fabricated by Sputtering-Based Method with Ceramic Quaternary Target

Properties of CuInxGa1−xSe2 Thin Films Grown from Electrodeposited Precursors with Different Levels of Selenium Content

Fabrication of Se-rich Cu(In1-XGaX)Se2 Quaternary Ceramic Target

The Formation Mechanism of Cu(In0.7Ga0.3)Se-2 Nanoparticles and the Densification Trajectory of the Se-Rich Quaternary Target by Hot Pressing

Effects of Annealing on CuInGaSe2 Solar Cell Prepared by Magnetron Sputtering

Influences of Sulfurization on Performances of Cu(In,Ga)(Se,S)2 Cells Fabricated Based on the Method of Sputtering CIGSe Quaternary Target

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

Preparation of Wide Bandgap CuGaSe2 Absorbers and Solar Cells by Sputtering a Selenium-Rich Ceramic Target and Annealing in a Selenium-Free Atmosphere

Preparation of wide bandgap CuGaSe 2 absorbers and solar cells by sputtering a selenium-rich ceramic target and annealing in a selenium-free atmosphere

Cu(In,Ga)Se-2 Thin Films Annealed with SnSe2 for Solar Cell Absorber Fabricated by Magnetron Sputtering

13.6%-Efficient Cu(In,Ga)Se-2 Solar Cell with Absorber Fabricated by Rf Sputtering of (In,ga)(2)se-3 and Cu Se Targets

Comparison of the Compositions and Structures of Electrodeposited Cu-Poor and Cu-Rich Cu(In1-Xgax)Se-2 Films Before and after Selenization

Influence of Different Precursor Surface Layers on Cu(In1-Xgax)Se-2 Thin Film Solar Cells

Effects of Cu Elements on Cu(In,Ga)Se2 Film and Solar Cell

Preparation and Properties of CuInxGa1−xSe2thin-film Solar Cell Absorbers from Selenization of Ga-rich Electrodeposited Precursors

Fabrication of Cu(In, Ga)Se-2 Thin Films by Sputtering from A Single Quaternary Chalcogenide Target

Influence of H2Se Concentration on Se-rich CZTSSe Absorbers Sputtered with a Ceramic Quaternary Target