Abstract:The Cu elements of Cu (In, Ga) Se2 (CIGS) have very important influences on the electrical properties of CIGS absorber and solar cells. In this paper, Cu-poor and Cu-rich absorber layers (0.7 Cu/(Ga+In) (1.15) and solar cells are prepared by evaporation method. The SEM and Hall measurements reveal that Cu-rich material shows superior structural (larger grain size, better crystalline) and electrical (lower resistivity, higher mobility) properties to Cu-poor material. However, I-V tests show that the efficiency of Cu-poor solar cell is better than that of the Cu-rich device. The temperature-dependent I-V tests indicate that electron loss is mainly due to the bulk recombination in Cu-poor solar cell, and the activation energy of recombination is comparable to the band gap energy of Cu-poor solar cell. In contrast, in the Cu-rich devices the recombination at the heterointerface is dominant, and the activation energy is smaller than the band gap energy of the absorber material, which is an important drawback of open circuit voltage. Finally, Cu-poor surface on Cu-rich absorber is prepared by three-stage evaporation process, which reduces the short-circuit current and open-circuit voltage loss and optimizes the performance of CIGS solar cells. The efficiency of CIGS solar cell is achieved to be as high as more than 15%.

Influences of Ga Concentration on Performances of CuInGaSe2 Cells Fabricated by Sputtering-Based Method with Ceramic Quaternary Target

Influences of Sulfurization on Performances of Cu(In,Ga)(Se,S)2 Cells Fabricated Based on the Method of Sputtering CIGSe Quaternary Target

The Relationships Between Electronic Properties and Microstructure of Cu(In,Ga)Se-2 Films Prepared by Sputtering from A Quaternary Target

Cu(In,Ga)Se-2 Solar Cells Fabricated by Sputtering from Copper-Poor and Selenium-Rich Ceramic Target with Selenium-Free Post Treatment

The Effects of Selenium Content on Cu(Inga)Se-2 Thin Film Solar Cells by Sputtering from Quaternary Target with Se-Free Post Annealing

The Influence of a CIGS Thin Film Composition on Performance of a Solar Cell

The Effects of Annealing Temperature on CIGS Solar Cells by Sputtering from Quaternary Target with Se-free Post Annealing

Influence of Cu on Ga diffusion during post-selenizing the electrodeposited Cu/In/Ga metallic precursor process

Influence of Different Precursor Surface Layers on Cu(In1-Xgax)Se-2 Thin Film Solar Cells

Research progress on synthesis of CuIn 1-xGa xSe 2 nanoparticles

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

13.6%-Efficient Cu(In,Ga)Se-2 Solar Cell with Absorber Fabricated by Rf Sputtering of (In,ga)(2)se-3 and Cu Se Targets

Gallium Diffusion in Cigs Thin Films Prepared by Sequential Sputtering/Selenization Technique

Fabrication of Se-rich Cu(In1-XGaX)Se2 Quaternary Ceramic Target

Preparation and Properties of CuInxGa1−xSe2thin-film Solar Cell Absorbers from Selenization of Ga-rich Electrodeposited Precursors

Effects of Cu Elements on Cu(In,Ga)Se2 Film and Solar Cell

Investigation on Preparation and Performance of High Ga CIGS Absorbers and Their Solar Cells.

The Effects of Preheating Temperature on CuInGaSe2/CdS Interface and the Device Performances

Effects of Annealing on CuInGaSe2 Solar Cell Prepared by Magnetron Sputtering

Comparative Study of the Role of Ga in Cigs Solar Cells with Different Thickness