Abstract:A one-step route was developed to fabricate Cu(In,Ga)Se2 (CIGS) absorber layers by direct magnetron sputtering from a single quaternary target with the composition of CuIn0.75Ga0.25Se2. The effects of the substrate temperature, the working pressure and the sputtering power on the morphology and phase structure of the CIGS layers were studied using scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The microstructure properties of the layers, including the crystallinity, grain size, compactness and the surface evenness, were found to be strongly dependent on the deposition parameters. CIGS absorbers with compact microstructure and large grains of micrometer size were obtained at 400°C and 160W, showing a very strong (220)/(204) orientation preference when sputtered at a higher working pressure. Raman spectra indicated no precipitation of the Cu–Se binary phases, but revealed a slight difference in the Ga/(Ga+In) ratio of different layers. The overall composition of the as-sputtered CIGS film was confirmed to be in agreement with the target composition through energy dispersive X-ray spectroscopy study. In comparison with the conventional co-evaporation or post-selenization synthesis for CIGS, the one-step sputtering route is more simplified and economical, which shows great potential to reduce the production cost of CIGS-based solar cells.

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Fabrication of Cu(In, Ga)Se-2 Thin Films by Sputtering from A Single Quaternary Chalcogenide Target

Fabricating Cu(In,Ga)Se2 (CIGS) Thin Films with Large Grains Based on the Quaternary CIGS Targets

The Relationships Between Electronic Properties and Microstructure of Cu(In,Ga)Se-2 Films Prepared by Sputtering from A Quaternary Target

Fabrication of Se-rich Cu(In1-XGaX)Se2 Quaternary Ceramic Target

Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors

13.6%-Efficient Cu(In,Ga)Se-2 Solar Cell with Absorber Fabricated by Rf Sputtering of (In,ga)(2)se-3 and Cu Se Targets

One-Step Synthesis of Cu(In,Ga)Se-2 Absorber Layers by Magnetron Sputtering from A Single Quaternary Target

Cu(In,Ga)Se2 solar cell with 16.7% active‐area efficiency achieved by sputtering from a quaternary target

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

CIGS formation by high temperature selenization of metal precursors in H 2 Se atmosphere

Ga2Se3 Treatment of Cu-rich CIGS Thin Films to Fabricate Cu-poor CIGS Thin Films with Large Grains and U-shaped Ga Distribution

Preparation and Properties of CuInxGa1−xSe2thin-film Solar Cell Absorbers from Selenization of Ga-rich Electrodeposited Precursors

Fabrication of Cu(In,Ga)Se2 thin films solar cell by selenization process with Se vapor

Surface evolution of sputtered Cu(In,Ga)Se 2 thin films under various annealing temperatures

Influences of Ga Concentration on Performances of CuInGaSe2 Cells Fabricated by Sputtering-Based Method with Ceramic Quaternary Target

Fabrication of Cu(In,Ga)Se-2 Thin Films from Nanoparticles by Non-Vacuum Mechanochemical Method and Rapid Thermal Annealing Process

Preparation of Cu(In,Ga)Se2 Thin Film by Solvothermal and Spin-coating Process

The Formation Mechanism of Cu(In0.7Ga0.3)Se-2 Nanoparticles and the Densification Trajectory of the Se-Rich Quaternary Target by Hot Pressing

Synthesis and Characteristics of Cu(In,Ga)Se2 Thin Films from Nanoparticles by Solvothermal Method and Selenisation Process