Abstract:In the present paper, the properties of Cu(In(1-x) Ga(x)) Se2 (CIGS) thin film absorber materials for the solar cells obtained by selenization of the precursors with In-rich or CuGa-rich surface layers were studied by XRD, SEM and Raman spectra. The photovoltaic devices based on the absorbers were measured and analyzed by illuminated J-V curve subsequently. The performance of the device constructed by the absorbers obtained by selenization of the precursors with CuGa-rich surface layer was improved greatly compared to that with In-rich surface layer. Through Raman spectra measurement, it was found that the Raman peak of the A1 mode was shifted for the CuGa-rich one, which is verified that the band gap of the surface layers was elevated. Moreover the value of increased Ga contents within the surface region of films were calculated by the relation between the Raman shifts and the Ga contents. As a result, the devices based on the thin films with the elevated surface energy band by selenizing the precursors with the CuGa-rich surface layer improved further the V(oc) and FF by about 74 mV and 8% respectively compared to that of corresponding to the one with In-rich surface layers, so that the conversion efficiency of the photovoltaic devices based on these thin films with CuGa-rich surface layer was improved by up to 9.4%. Meanwhile Raman scattering spectroscopy has proven to be a very powerful and useful technique for the surface analysis of such thin film solar cell semiconducuor materials.

Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors

Preparation and Properties of CuInxGa1−xSe2thin-film Solar Cell Absorbers from Selenization of Ga-rich Electrodeposited Precursors

Influence of Different Precursor Surface Layers on Cu(In1-Xgax)Se-2 Thin Film Solar Cells

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Preparation of Cu(In,Ga)Se 2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

Properties of CuInxGa1−xSe2 Thin Films Grown from Electrodeposited Precursors with Different Levels of Selenium Content

Comparison of the Compositions and Structures of Electrodeposited Cu-Poor and Cu-Rich Cu(In1-Xgax)Se-2 Films Before and after Selenization

Fabrication of Cu(In, Ga)Se-2 Thin Films by Sputtering from A Single Quaternary Chalcogenide Target

Preparation and Characterization of Cu(In, Ga) (se, S)(2) Thin Films by Sulfurization of Electrodeposited, Cu(In,Ga)Se-2 Precursors

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

Metal Precursor with Bi-Layer Indium for Cu(In,Ga)Se2 Thin Film Preparation

Fabrication of Cu(In,Ga)Se2 thin films solar cell by selenization process with Se vapor

Synthesis and Characterization of CIGS Powder

CIGS formation by high temperature selenization of metal precursors in H 2 Se atmosphere

Influence of Cu on Ga diffusion during post-selenizing the electrodeposited Cu/In/Ga metallic precursor process

Influence of Ga Concent of CuInGa Precursor on Stoichiometry of Cu(In1 - xGax) Se2 Photon Absorption Films

Preparation of High Quality CuIn1-xGaxSe2 Thin Films by Modified Selenization Procedure of Sequential Sputtering Metallic Precursors

The Influence of a CIGS Thin Film Composition on Performance of a Solar Cell

Metal Precursor Influence on Performance of Culn1−xGaxSe2 Films

Study on the Modified Surface Layers of the Cigs Thin Films by Raman Spectra

Metal Precursor Influence On Performance Of Cuin1-Xgaxse2 Films