Abstract:CuIn1-xGaxSe2 (CIGS) films were prepared by a two-stage method, in which Cu-In-Ga metallic precursors were firstly deposited on unheated Mo-coated soda lime glass substrates by direct current sputtering CuGa (20%Ga) and radio frequency sputtering In targets in an Ar atmosphere, followed by selenization at 520 degrees C for 40 min in Se vapor. By adjusting the sputtering thickness ratio of surface CuGa (20%Ga) and bottom CuGa (20%Ga) alloy layers in metal precursor, different CIGS thin films were fabricated. Through X-ray diffraction spectra, Raman spectra, local energy dispersive spectrometer, planar- and cross-sectional views of scanning electron microscopy measurements, it revealed that the CIGS thin films from selenization of metal precursor with CuGa:In:CuGa thickness ratio of 7:20:3 (sample-2-se) was of chalcopyrite structure with the preferred (112) orientation, and the grains sizes ranged from 0.5 mu m to 2 mu m, and sample-2-se had no binary compound phase of In-Se and order defect compound phase. Consequently, the results of illuminated current-voltage curve and quantum efficiency measurements showed that the GIGS film device made from sample-2-se had relative higher photo-electric conversion efficiency (3.59%) and good spectrum response.

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Preparation of High Quality CuIn1-xGaxSe2 Thin Films by Modified Selenization Procedure of Sequential Sputtering Metallic Precursors

Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors

Preparation and Characterization of Cu(In, Ga) (se, S)(2) Thin Films by Sulfurization of Electrodeposited, Cu(In,Ga)Se-2 Precursors

Metal Precursor Influence On Performance Of Cuin1-Xgaxse2 Films

Comparison of the Compositions and Structures of Electrodeposited Cu-Poor and Cu-Rich Cu(In1-Xgax)Se-2 Films Before and after Selenization

Influence of Ga Concent of CuInGa Precursor on Stoichiometry of Cu(In1 - xGax) Se2 Photon Absorption Films

Metal Precursor Influence on Performance of Culn1−xGaxSe2 Films

Influence of Different Precursor Surface Layers on Cu(In1-Xgax)Se-2 Thin Film Solar Cells

Preparation and characterization of Cu(In, Ga)(Se, S)2 thin films by sulfurization of electrodeposited Cu(In, Ga) Se2

Study of Cu–In–Ga Precursor for Cu(In,Ga)Se_2 Thin Film Prepared by the Two-Stage Process

Study on How the Content of Selenium in the Precursors Influences the Properties of CuInSe2 Thin Films

P-type CuInSe 2 Thin Films Prepared by Selenization of One-Step Electrodeposited Precursors

Preparation of Polycrystalline Cu(In,Ga)Se_2 Thin Film with Nano-metal Oxide:the Chemical Reaction Process and Its Properties

Synthesis and Characteristics of Cu(In,Ga)Se2 Thin Films from Nanoparticles by Solvothermal Method and Selenisation Process

The Influence of Selenization Temperature on the Properties of CuInGaSe2 Thin Film

Influence of Bilayer Precursor Films on Structure and Morphology of CIGS Films

Preparation of Cu(In,Ga)Se2 Thin Film by Non-Vacuum Mechanochemical and Spin-Coating Process

Preparation of Cu(In,Ga)Se2 Thin Film by Solvothermal and Spin-coating Process

Investigation of Cu(In,Ga)Se2 Polycrystalline Growth: Ga Diffusion and Surface Morphology Evolution

Preparation and Properties of CuInxGa1−xSe2thin-film Solar Cell Absorbers from Selenization of Ga-rich Electrodeposited Precursors