Selenization Temperature and Properties of CuInSe2 Films

Xiaofeng Ding,Donglin Han,Gong Zhang,Daming Zhuang

DOI: https://doi.org/10.3969/j.issn.1672-7126.2006.z1.008

2006-01-01

Abstract:CuInSe2(CIS) films were grown in two steps: First, Cu-In precursor films were coated by middle frequency a.c. magnetron sputtering on glass substrate, then Cu-In alloy is selenized, that is, reacts with thermally evaporated Se at an elevated temperature to form the resultant CIS compound. The microstructures and electric properties of CIS films were characterized with X-ray diffraction, energy dispersive X-ray spectroscopy and scanning electron microscopy and Hall measurement. The results show that the selenization temperature significantly affects CIS grain sizes and defect density. As the temperature rises, the grain size increases. For instance, at 550°C, the grain size reaches about 2 μm; at a temperature higher than 550°C, densities of holes and interstices increase at gain boundaries. We propose that the weak p-type films selenized at 530°C with stoichiometry of CuInSe2 are the best photon absorption films for CIS solar cells.