Effects of Cu-In Precursor Film Phase Structure on CuInSe2 Film Properties

方玲,张弓,庄大明,赵明,郑麒麟,丁晓峰,吴敏生

DOI: https://doi.org/10.3321/j.issn:1000-0054.2004.08.026

2004-01-01

Abstract:The effect of sputtering power on the phase structures of Cu-In precursors and the properties of CuInSe_2 (CIS) films were investigated. Cu-In precursors prepared using a middle frequency AC magnetron at different sputtering powers. CuInSe_2 films were formed by selenization in a selenium atmosphere. SEM and EDX were used to observe the surface morphologies and to determine the atomic concentrations in both the Cu-In precursors and the CIS films. Their microstructures were characterized by XRD. The kinetics of the reactions in the film were also analyzed. The results show that the Cu-In precursors are mainly composed of a Cu_11In_9 phase with or without a CuIn phase depending on the sputtering power. Stoichiometric CIS films with a single chalcopyrite phase were synthesized from Cu-In precursors containing the Cu_11In_9 phase and the CuIn phase. The Cu_2Se phase occurs in addition to the CIS chalcopyrite phase in Cu-rich CIS films formed using a Cu-In precursor with the Cu_11In_9 phase. The Cu-In precursor with Cu_11In_9 and CuIn phases is favorable for CuInSe_2 absorbers in solar cells.