INFLUENCE OF Al CONCENTRATION IN PRECURSOR ON COMPOSITION AND STRUCTURE OF Cu (InAl) Se2 ABSORBER

向华,庄大明,张弓,李春雷
DOI: https://doi.org/10.3321/j.issn:0254-0096.2009.01.017
2009-01-01
Abstract:CuInAl(CIA) films as precursors for CIAS were prepared using middle frequency magnetron sputtering and CIAS absorbers were obtained by selenization.SEM and XRD were used to observe and analyse the compositions,microstructures, and surface morphologies of the films.The influences of Al concentration in precursors on compositions,microstructures of CIAS absorbers were analyzed.The results showed that the CIAS absorber films with a Cu/(In+Al) atomic ratio of approaching 1 and an adjustable Al/(In+Al) ratio and with uniform element distribution could be obtained by adjusting Al concentration in CIA precursors.CIAS obtained in the work is composed of Cu(In_(1-x)Al_x)Se_2 phase.Al exists mainly in solid solution by substituting In.
What problem does this paper attempt to address?