Abstract:A precursor film with a Cu gradient was prepared in order to improve the quality of the absorber film produced by sputtering CIGS targets when using glass substrates. Two ceramic quaternary targets with different copper content were used for alternatively sputtering to get a bi-layer precursor film with a Cu gradient; meanwhile, the crystallization property and cell performance were studied. This was done in order to study the activities of the Cu element in the precursor layer before and after selenization. The film states of the temperature-rise period and high temperature selenization period were investigated. The appropriate structure of the precursor film was the Cu-rich layer underneath the Cu-poor layer. The Cu–Se phase, which is important for the crystalline property, can be produced in the Cu-rich layer under the heating period. The Cu-poor layer on the top reacts with the Cu-Se compound in the annealing process at a high temperature, and the big grain size of the absorber layer can be obtained due to Cu diffusion promoted by the gradient in the precursor film, as well as better conversion efficiency. This result shows that constructing the precursor film with a Cu gradient by sputtering different quaternary CIGS targets is a very promising fabrication method to obtain high-performance solar-cell devices with a good crystallization property under an annealing temperature of 550 °C and is suitable for further industrialized application.

Study on How the Content of Selenium in the Precursors Influences the Properties of CuInSe2 Thin Films

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Local Segregation in Cu-In Precursors and Its Effects on Microstructures of Selenized Cuinse2 Thin Films

Study of Cu–In–Ga Precursor for Cu(In,Ga)Se_2 Thin Film Prepared by the Two-Stage Process

Optimization of Fabrication Parameters of CuInSe2 Thin Films by DC-Magnetron Sputtering the Metal Precursor Followed by Selenization

Influence of Ga Concent of CuInGa Precursor on Stoichiometry of Cu(In1 - xGax) Se2 Photon Absorption Films

Metal Precursor with Bi-Layer Indium for Cu(In,Ga)Se2 Thin Film Preparation

Research progress on synthesis of CuIn1-x Gax Se2 nanoparticles

A Study of Different Selenium Sources in the Synthesis Processes of Chalcopyrite Semiconductors

Influence of Lamination Modes of CuInGa Precursor Films on Composition and Microstructures of Selenized CuInGa Absorber

Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors

Effects of Cu-In Precursor Film Phase Structure on CuInSe2 Film Properties

The Effects of Selenium Content on Cu(Inga)Se-2 Thin Film Solar Cells by Sputtering from Quaternary Target with Se-Free Post Annealing

The Influence of Selenization Temperature on the Properties of CuInGaSe2 Thin Film

Research progress on synthesis of CuIn 1-xGa xSe 2 nanoparticles

An Optimized In–CuGa Metallic Precursors for Chalcopyrite Thin Films

Preparation and properties of compositionally tunable Cu3Sb(Sx,Se1-x)4 thin films

Influence of Bilayer Precursor Films on Structure and Morphology of CIGS Films

Research on CuInS2 Thin Films Prepared by One-step Electrodeposition

Influence of a Precursor Film with a Copper Gradient on the Properties of a Copper Indium Gallium Selenide Solar Cell