Abstract:We report a study of copper indium gallium selenide (CIGS) thin film growth in the annealing process at temperature range from 120 °C to 600 °C. Thin films were prepared by sputtering metal precursors and subsequent selenization process. Surface morphologies of thin films were observed by using high resolution field emission scanning electron microscopy (FESEM). Phases in quaternary systems Cu–In–Ga–Se were investigated by X-ray diffraction (XRD). Evolution of crystalline structure in the film surface was studied by Raman spectra. A possible reaction path from metallic precursors to a single CIGS phase was obtained by merging all results of SEM, XRD and Raman. Above 210 °C, selenium reacted with Cu and In to form binary selenide. CuSe crystalline platelets were observed clearly in the film surfaces. When temperature was reaching 380 °C, Cu2−xSe and InSe reacted with excess Se to form CuInSe2 (CIS) and contributed to the grain growth. Above 410 °C, Ga-rich phase was detected in the films. With increased temperature, Ga diffused into CIS crystalline lattices. Finally, at 600 °C, a single phase of Cu‐In‐Ga‐Se quaternary system was formed. A large number of triangular and hexagonal structures were observed in the film due to a re-crystalline process at a high annealing temperature.

Study of Cu–In–Ga Precursor for Cu(In,Ga)Se_2 Thin Film Prepared by the Two-Stage Process

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Metal Precursor with Bi-Layer Indium for Cu(In,Ga)Se2 Thin Film Preparation

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Influence of Ga Concent of CuInGa Precursor on Stoichiometry of Cu(In1 - xGax) Se2 Photon Absorption Films

Influence of Lamination Modes of CuInGa Precursor Films on Composition and Microstructures of Selenized CuInGa Absorber

Study on How the Content of Selenium in the Precursors Influences the Properties of CuInSe2 Thin Films

An Optimized In–CuGa Metallic Precursors for Chalcopyrite Thin Films

Metal Precursor Influence on Performance of Culn1−xGaxSe2 Films

Metal Precursor Influence On Performance Of Cuin1-Xgaxse2 Films

Influence of Bilayer Precursor Films on Structure and Morphology of CIGS Films

PROCESS AND PERFORMANCE OF CHALCOPYRITE CIGSe ABSORBERS FABRICATED BY MAGNETRON SPUTTERING

Preparation and characterization of Cu(In,Ga)Se2 thin films derived by frequency magnetron sputtering

Investigation of Copper Indium Gallium Selenide Material Growth by Selenization of Metallic Precursors

Optimization of Fabrication Parameters of CuInSe2 Thin Films by DC-Magnetron Sputtering the Metal Precursor Followed by Selenization

The Influence of Selenization Temperature on the Properties of CuInGaSe2 Thin Film

Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors

ANNEALING STUDIES ON CIGSE PREPARED BY MAGNETRON SPUTTERING

Research on CuInS2 Thin Films Prepared by One-step Electrodeposition

Preparation of Cu(In,Ga)Se2 Thin Film by Solvothermal and Spin-coating Process

Preparation of Cu(In,Ga)Se2 Thin Film by Non-Vacuum Mechanochemical and Spin-Coating Process