Abstract:Cu(In1-xGax)Se2(CIGS) photon absorption films were grown in two steps: First, CuInGa (CIG) precursors were alternatively deposited, by middle frequency a.c. magnetron sputtering of Cuin and CuGa targets, on glass substrate, and then CuInGa precursors were selenized. CIGS and CIG films were characterized with X-ray diffraction and scanning electron microscopy to evaluate the compositions, stoichiometry and microstructures of the two materials, CIG precursor in particular. The results show that Ga content of CIG precursors strongly affects the CIGS stoichiometry. With appropriate Ga content in CIG precursors, the atomic ratio of Cu/(In + Ga) can be close to 1:1; adjusting the Ga content in the precursor results in a control of Cu/(In + Ga) ratio of the CIGS films with uniformly distributed constituent elements. We found that Cu(In1-xGax)Se2 is mainly a solid solution with Ga atoms substituting In atoms. Cu(In1-xGax)Se2 films with its Cu(In + Ga) ratio being as high as 0.270:1, can be grown by selenizing the CIG precursors, which was deposited at the sputtering powers of 0.24 W/cm2 for CuIn target and 0.30 W/cm for CuGa target, respectively.

PROCESS AND PERFORMANCE OF CHALCOPYRITE CIGSe ABSORBERS FABRICATED BY MAGNETRON SPUTTERING

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

ANNEALING STUDIES ON CIGSE PREPARED BY MAGNETRON SPUTTERING

Study of Cu–In–Ga Precursor for Cu(In,Ga)Se_2 Thin Film Prepared by the Two-Stage Process

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

Optimization of Fabrication Parameters of CuInSe2 Thin Films by DC-Magnetron Sputtering the Metal Precursor Followed by Selenization

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Effects of Annealing on CuInGaSe2 Solar Cell Prepared by Magnetron Sputtering

Metal Precursor with Bi-Layer Indium for Cu(In,Ga)Se2 Thin Film Preparation

The Effects of Selenium Content on Cu(Inga)Se-2 Thin Film Solar Cells by Sputtering from Quaternary Target with Se-Free Post Annealing

Effects of sputtering power on compositions and microstructures of precursor films for cigs absorber

Preparation and performances of high density Cu(In, Ga)Se3 ceramic targets

Influence of Ga Concent of CuInGa Precursor on Stoichiometry of Cu(In1 - xGax) Se2 Photon Absorption Films

Fabrication of Se-rich Cu(In1-XGaX)Se2 Quaternary Ceramic Target

The Relationships Between Electronic Properties and Microstructure of Cu(In,Ga)Se-2 Films Prepared by Sputtering from A Quaternary Target

Influences of Sulfurization on Performances of Cu(In,Ga)(Se,S)2 Cells Fabricated Based on the Method of Sputtering CIGSe Quaternary Target

Study on How the Content of Selenium in the Precursors Influences the Properties of CuInSe2 Thin Films

An Investigation on Preparation of CIGS Targets by Sintering Process

Influence of Lamination Modes of CuInGa Precursor Films on Composition and Microstructures of Selenized CuInGa Absorber

Influences Of The Selenization Duration On Compositions And Microstructures Of Cigs Absorber

Surface evolution of sputtered Cu(In,Ga)Se 2 thin films under various annealing temperatures