Abstract:In the present paper, the properties of Cu(In(1-x) Ga(x)) Se2 (CIGS) thin film absorber materials for the solar cells obtained by selenization of the precursors with In-rich or CuGa-rich surface layers were studied by XRD, SEM and Raman spectra. The photovoltaic devices based on the absorbers were measured and analyzed by illuminated J-V curve subsequently. The performance of the device constructed by the absorbers obtained by selenization of the precursors with CuGa-rich surface layer was improved greatly compared to that with In-rich surface layer. Through Raman spectra measurement, it was found that the Raman peak of the A1 mode was shifted for the CuGa-rich one, which is verified that the band gap of the surface layers was elevated. Moreover the value of increased Ga contents within the surface region of films were calculated by the relation between the Raman shifts and the Ga contents. As a result, the devices based on the thin films with the elevated surface energy band by selenizing the precursors with the CuGa-rich surface layer improved further the V(oc) and FF by about 74 mV and 8% respectively compared to that of corresponding to the one with In-rich surface layers, so that the conversion efficiency of the photovoltaic devices based on these thin films with CuGa-rich surface layer was improved by up to 9.4%. Meanwhile Raman scattering spectroscopy has proven to be a very powerful and useful technique for the surface analysis of such thin film solar cell semiconducuor materials.

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Efficiency improvement of electrodeposition-processed Cu(In,Ga)Se2 solar cell with widen surface bandgap by spin-coating In2S3 thin film

Microstructural Characterization of Cu-poor Cu (in, Ga)Se2 Surface Layer

Enhancement of Hole Barrier and Light Absorption in the {112} Surface of CuIn0.5Ga0.5Se2Solar Cell

Fabricating Cu(In,Ga)Se2 (CIGS) Thin Films with Large Grains Based on the Quaternary CIGS Targets

Ga2Se3 Treatment of Cu-rich CIGS Thin Films to Fabricate Cu-poor CIGS Thin Films with Large Grains and U-shaped Ga Distribution

Fabrication of Cu(In,Ga)Se-2 Thin Films from Nanoparticles by Non-Vacuum Mechanochemical Method and Rapid Thermal Annealing Process

Wide Bandgap CIGS Thin Films Via Ag-PDT to Ameliorate the Interface Quality of CIGS/CdS Heterojunction

Study on the Modified Surface Layers of the Cigs Thin Films by Raman Spectra

Characterization of Cu(In,Ga)Se2 Films Deposited by Single-Step Electron Beam Evaporation for Solar Cell Applications

Influence of Cu on Ga diffusion during post-selenizing the electrodeposited Cu/In/Ga metallic precursor process

Revealing Surface Modifications of Caesium Indium Selenium Treated Cu-rich Cu(In,Ga)Se2: A Study of the Suppression of the Interfacial Recombination

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

Enhancing Surface Properties for Electrodeposited Cu(In,Ga)Se2 Films by (NH4)2S Solution at Room Temperature

Preparation and characterization of the CIGS thin films with double-graded band gap

CIGS formation by high temperature selenization of metal precursors in H 2 Se atmosphere

Fabrication of Cu(In, Ga)Se-2 Thin Films by Sputtering from A Single Quaternary Chalcogenide Target

Growth of Cu(In,Ga)Se-2 Thin Films Using Ionization Ga Source and Application for Solar Cells

Facile Silver-Incorporated Method of Tuning the Back Gradient of Cu(In,Ga)Se2 Films

Preparation of High Quality CuIn1-xGaxSe2 Thin Films by Modified Selenization Procedure of Sequential Sputtering Metallic Precursors

Synthesis and Characteristics of Cu(In,Ga)Se2 Thin Films from Nanoparticles by Solvothermal Method and Selenisation Process