Abstract:Cu(In1-xGax)Se2(CIGS) photon absorption films were grown in two steps: First, CuInGa (CIG) precursors were alternatively deposited, by middle frequency a.c. magnetron sputtering of Cuin and CuGa targets, on glass substrate, and then CuInGa precursors were selenized. CIGS and CIG films were characterized with X-ray diffraction and scanning electron microscopy to evaluate the compositions, stoichiometry and microstructures of the two materials, CIG precursor in particular. The results show that Ga content of CIG precursors strongly affects the CIGS stoichiometry. With appropriate Ga content in CIG precursors, the atomic ratio of Cu/(In + Ga) can be close to 1:1; adjusting the Ga content in the precursor results in a control of Cu/(In + Ga) ratio of the CIGS films with uniformly distributed constituent elements. We found that Cu(In1-xGax)Se2 is mainly a solid solution with Ga atoms substituting In atoms. Cu(In1-xGax)Se2 films with its Cu(In + Ga) ratio being as high as 0.270:1, can be grown by selenizing the CIG precursors, which was deposited at the sputtering powers of 0.24 W/cm2 for CuIn target and 0.30 W/cm for CuGa target, respectively.

Preparation and characterization of the CIGS thin films with double-graded band gap

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Effects Of Na Incorporated At Different Periods Of Deposition On Cu(In, Ga)Se-2 Films

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Ga-grading Profiles Formed by Incorporation of Gallium into Cu(In1−xGax)Se2 Absorber Thin Films

Synthesis and Characterization of CIGS Powder

Influence of Ga Concent of CuInGa Precursor on Stoichiometry of Cu(In1 - xGax) Se2 Photon Absorption Films

Research on CuInS2 Thin Films Prepared by One-step Electrodeposition

Research progress on synthesis of CuIn 1-xGa xSe 2 nanoparticles

Research progress on synthesis of CuIn1-x Gax Se2 nanoparticles

Influence of Bilayer Precursor Films on Structure and Morphology of CIGS Films

Formation of CuInSe2 and Cu(In,Ga)Se2 films by electrodeposition and vacuum annealing treatment

Characterization of Cu(In,Ga)Se2 Films Deposited by Single-Step Electron Beam Evaporation for Solar Cell Applications

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

Ga2Se3 Treatment of Cu-rich CIGS Thin Films to Fabricate Cu-poor CIGS Thin Films with Large Grains and U-shaped Ga Distribution

Structures, Optical Absorption and Electrical Properties of Pulsed-Laser-Deposited Cuin0.8ga0.2se2 Thin Films and Their Use in Cigs/Pcbm Photovoltaic Structures

Growth and Characterization of Copper Indium Gallium Diselenide Films for Solar Cells Fabrication

Preparation and Characterization of Cugas2 Thin Films As A Promising Parent Material for Intermediate Band Solar Cells

Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors

Structural Analysis of Cu(In1-Xgax)Se-2 Multi-Layer Thin Film Solar Cells

Segregation of Ga in CuInGaSe2 Films Grown by Magnetron Sputtering and Selenization