Abstract:CuSbSe 2 is emerging as an alternative absorber for thin-film photovoltaics owing to its intrinsic p-type conductivity, proper band gap (~ 1.1 eV), high-absorption coefficient (> 10 4 cm −1 ) and low cost. Moreover, it is nontoxic and its compositional elements (Cu, Se and Sb) are abundant in the crust of earth. In the present work, Sb 2 Se 3 /Cu multilayers were deposited by pulsed laser deposition (PLD) followed by magnetron sputtering (MS). After that, the as-prepared multilayers were annealed in-suit in the MS chamber at different temperatures and times to obtain high-quality CuSbSe 2 ternary compound. Five intermetallic compounds were generated in this process, including CuSbSe 2 , Sb 2 Se 3 , CuSe 2 , Cu 2 Se and Cu 3 SbSe 3 . Besides, it was found out that most CuSbSe 2 ternary compound was generated when the as-prepared multilayers were annealed at 420 °C for 10 min. The crystallite size of CuSbSe 2 phase increased with elevating annealing temperature, while more holes and gaps occurred when the annealing temperature exceeded 420 °C. The results of energy-dispersive spectrometer indicated the film was highly developed with nearly stoichiometric atomic ratio of 27.91:22.72:49.37 (Cu:Sb:Se). The electrical measurement results revealed the semiconducting nature of the film and gave the conductivity activation energy of 0.26 eV, 0.08 eV and 0.13 eV, respectively. The direct band gap of the annealed film was revealed as 1.13 eV, which fulfilled the Shockley–Queisser requirements for the efficient harvesting of the solar spectrum.

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Fabrication of Cu(In,Ga)Se-2 Thin Films from Nanoparticles by Non-Vacuum Mechanochemical Method and Rapid Thermal Annealing Process

Synthesis and Characteristics of Cu(In,Ga)Se2 Thin Films from Nanoparticles by Solvothermal Method and Selenisation Process

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Investigation of Microstructuring CuInGaSe2thin Films with Ultrashort Laser Pulses

Optoelectronic characterization of CuInGa(S)2 thin films grown by spray pyrolysis for photovoltaic application

Effects of Deposition Profiles on RF-sputtered Cu(In,Ga)Se2 Films at Low Substrate Temperature

Properties of CuInxGa1−xSe2 Thin Films Grown from Electrodeposited Precursors with Different Levels of Selenium Content

Effects of Cu Elements on Cu(In,Ga)Se2 Film and Solar Cell

Structural, electrical and optical characteristics of CuSbSe 2 films prepared by pulsed laser deposition and magnetron sputtering processes