Abstract:Cu(In,Ga)Se<sub>2</sub> (CIGS) solar cells attract intense interest both in research and industry fields due to their high power conversion efficiencies, low costs, and high stabilities. The power conversion efficiency of a CIGS solar cell is limited by the deep level defects distributed on the surface and in the bulk of the CIGS solar cells. In this work, we elucidate that the deep level defects are significantly suppressed during the CdS buffer layer deposition process via a chemical bath deposition (CBD) method. The X-ray photoelectron spectroscopy results show the incorporation of cadmium (Cd) into CIGS during the CdS deposition process, which is the main reason for the reduced deep level nonradiative recombination defects. Raman spectroscopy and secondary ion mass spectroscopy further reveal the reduction of nonradiative recombination deep level defects due to Cd incorporation. Besides, the high-resistivity i-ZnO layer provides field-effect passivation, leading to the enhancement of the power conversion efficiency from 11.0 to 12.1%. By a combination of the incorporation of Cd, i-ZnO passivation, and optimization of the band gap of CIGS, the champion power conversion efficiency of the CIGS solar cell is as high as 15.5% without an antireflective layer and alkali metal postdeposition treatment. Our results provide insights into the effect of the CdS buffer layer, CBD method, and high-resistivity i-ZnO layer on the performance of CIGS solar cells, which is quite helpful to further improve the power conversion efficiency of CIGS solar cells.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.0c01930?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.0c01930</a>.CIGS coevaporation deposition process; CdS CBD deposition; characterizations; top-view SEM images of CdS deposited via chemical bath deposition for different times; XRD pattern of CdS fabricated via a CBD method at 80 °C for 12 min; parameters for the simulations of the performance of CIGS solar cells with different thicknesses of i-ZnO; and EQE curves of CIGS solar cell obtained at 0, 0.5, −0.5, and 1 V DC voltage bias (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c01930/suppl_file/ae0c01930_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Mechanism‐Based Approach of CdS/Cu(In,Ga)Se2 (CIGS) Interfaces for CIGS Solar Cells Through Deposition in Different Stages of Continuous Chemical Bath Deposition Reaction: Key to Achieving High Photovoltaic Performance

Structural Characteristic of CdS Thin Films and Their Influences on Cu(In,Ga)Se2(CIGS) Thin Film Solar Cells

Interface Formation between CdS and Alkali Postdeposition-Treated Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers-Key To Understanding the Efficiency Gain

Effect of Zn(S,O,OH) Buffer Thin Films Formed on CIGS Through Different Stages and Reaction Processes in Chemical Bath Deposition: Interpretations from Mechanisms and Transformation Kinetics Perspective

Efficiency Enhancement of CIGS Solar Cells via Recombination Passivation

High-Efficiency Cu(In,Ga)Se₂ Thin Film Solar Cells Using ZnS and CdS Buffer Layers

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

Improvement of the Electrical Properties of a Cu(In,Ga)Se₂ Solar Cell Based on a ZnS Buffer Layer from Radio Frequency Magnetron Sputtering

Optical Properties of Cd1−xZnxS Thin Films for CuInGaSe2 Solar Cell Application

Optimal CdS Buffer Thickness to Form High-Quality CdS/Cu(In,Ga)Se 2 Junctions in Solar Cells without Plasma Damage and Shunt Paths.

Chemical Interface Structures in CdS/RbInSe2/Cu(In,Ga)Se2 Thin‐Film Solar Cell Stacks

Atomic-Scale Interface Modification Improves the Performance of Cu(In1- xGax)Se2/Zn(O,S) Heterojunction Solar Cells

Low-Pollution and Controllable Selective-Area Deposition of A Cds Buffering Layer on Cigs Solar Cells by A Photochemical Technique

Enhanced Efficiency of Cu(In,Ga)Se 2 Solar Cells With a Thin CdS Buffer Layer Via a Zn 0.8 Mg 0.2 O Second Buffer Layer

Effects of substrate orientation and solution movement in chemical bath deposition on Zn(O,S) buffer layer and Cu(In,Ga)Se2 thin film solar cells

Fabricating Cu(In,Ga)Se2 (CIGS) Thin Films with Large Grains Based on the Quaternary CIGS Targets

Cu(In,Ga)Se2 Solar Cells with Double Layered Buffers Grown by Chemical Bath Deposition

Optimization of CuInGaSSe properties and CuInGaSSe/CdS interface quality for efficient solar cells processed with CuInGa precursors

Interface Engineering for High-Efficiency Solution-Processed Cu(In,Ga)(S,Se)2 Solar Cells via a Novel Indium-Doped CdS Strategy

Tuning the band gap of the CIGS solar buffer layer Cd1−xZnxS (x=0–1) to achieve high efficiency

Beyond 10% Efficient CZTSSe Thin-Film Solar Cells Fabricated by a Two-Step CdS Deposition Process