Abstract:In this work, the effects of the non-deposition time during the sputtering process on the properties of CuInGaSSe (CIGSSe) absorbers and the quality of CIGSSe/CdS interface are investigated. It is found that the crystallinity of CuInGa precursor films can be reduced by shortening non-deposition time (t nd ). Reducing the crystallinity of precursor films can effectively decrease the surface roughness of the absorption layer and obtain a rational composition distribution. With the optimization of t nd , the roughness of CIGSSe film is reduced by 54%–57%. The small roughness enhances the uniformity and integrity of CdS films and enables the other subsequent films to be improved, thereby reducing the carrier recombination at the interface. The optimization of the composition distribution can improve the effective absorption of the incident light, reduce non-radiative recombination, and ensure the appropriate near-surface E g of the absorber. As a result, the increased open-circuit voltage (605 mV) and fill factor (78.5%) lead to the significant enhancement of the conversion efficiency. The best conversion efficiency achieved in this work is 17.4% without Ni/Al metal grid and anti-reflection coating.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to improve the performance of the CuInGaSSe (CIGSSe) absorber layer and the quality of the CIGSSe/CdS interface by optimizing the non - deposition time (\(t_{nd}\)) during the preparation of CuInGaSSe (CIGSSe) thin - film solar cells. Specifically, the paper focuses on the following aspects: 1. **Reducing the film surface roughness**: By shortening the non - deposition time (\(t_{nd}\)), the crystallinity of the precursor film can be reduced, thereby effectively reducing the surface roughness of the absorber layer and obtaining a reasonable composition distribution. 2. **Optimizing the composition distribution**: Adjusting the non - deposition time can affect the composition distribution and defects in the absorber layer, thereby increasing the effective absorption of incident light, reducing non - radiative recombination, and ensuring an appropriate bandgap (\(E_g\)) near the surface of the absorber layer. 3. **Improving device performance**: Through the above - mentioned optimizations, the open - circuit voltage (Voc) and fill factor (FF) can be increased, thereby significantly improving the conversion efficiency. In the experiment, the best conversion efficiency reached 17.4% without using Ni/Al metal grids and anti - reflective coatings. In summary, this research aims to improve the performance of CIGSSe thin - film solar cells by optimizing the non - deposition time during the sputtering process, especially by reducing the surface roughness and optimizing the composition distribution to improve the overall efficiency of the device.

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