Abstract:A novel segmented control strategy for selenization environment is introduced to regulate the selenization reaction by controlling the evaporation area of Se. This selenization method helps to promote element homogenization, optimize surface smoothness, and obtain a high‐crystalline‐quality absorber with low‐point defects. And the CZTSSe solar cell with a PCE of 13.77% is successfully achieved. High‐crystalline‐quality absorbers with fewer defects are crucial for further improvement of open‐circuit voltage (VOC) and efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. However, the preparation of high‐quality CZTSSe absorbers remains challenging due to the uncontrollability of the selenization reaction and the complexity of the required selenization environment for film growth. Herein, a novel segmented control strategy for the selenization environment, specifically targeting the evaporation area of Se, to regulate the selenization reactions and improve the absorber quality is proposed. The large evaporation area of Se in the initial stage of the selenization provides a great evaporation and diffusion flux for Se, which facilitates rapid phase transition reactions and enables the attainment of a single‐layer thin film. The reduced evaporation area of Se in the later stage creates a soft‐selenization environment for grain growth, effectively suppressing the loss of Sn and promoting element homogenization. Consequently, the mitigation of Sn‐related deep‐level defects on the surface and in the bulk induced by element imbalance is simultaneously achieved. This leads to a significant improvement in nonradiative recombination suppression and carrier collection enhancement, thereby enhancing the VOC. As a result, the CZTSSe device delivers an impressive efficiency of 13.77% with a low VOC deficit.

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Eliminating the Excess CuxSe Phase in Cu-rich Cu(In,Ga)Se2 by In2Se3 Treatment

Regulating Hetero‐Nucleation Enabling Over 14% Efficient Kesterite Solar Cells

The Influence of Selenization Temperature on the Properties of CuInGaSe2 Thin Film

Influences of Sulfurization on Performances of Cu(In,Ga)(Se,S)2 Cells Fabricated Based on the Method of Sputtering CIGSe Quaternary Target