Abstract:Cu(In,Ga)Se2 (CIGSe)-based solar cells are promising candidates for efficient sunlight harvesting. However, their complex composition and microstructure can change under operation conditions, for instance heating from sun light illumination can lead to a degradation in performance. Here, we investigate the thermally-induced degradation processes in a set of CIGSe-based solar cells that were annealed at temperatures between 150C and 300C. Using correlative atom probe tomography (APT)/transmission electron microscope (TEM), we found that the buffer-absorber interface is not sharp but consists of an interfacial zone (2 - 6.5 nm wide) where a gradient of constituent elements belonging to the CdS buffer and CIGSe absorber appears. An enhanced short-range Cd in-diffusion inside the CIGSe was observed whenever a low Ga/(Ga+In) ratio occurred at the interface. This might indicate the presence of Ga vacancies as a channeling defect for Cd in-diffusion inside the CIGSe layer leading to a buried pn-homojunction. We evidence that a considerable amount of Cd is found inside the CIGSe layer at annealing temperatures higher than 150C. Further investigations of the elemental redistribution inside the CIGSe layer combined with C-V measurements support the formation of CdCu donor like defects deep inside the p-type CIGSe which lead to a strong compensation of the CIGSe layer and hence to strong deterioration of cell efficiency at annealing temperatures higher than 200C. Hence, understanding the degradation processes in Cu(In,Ga)Se2 (CIGSe)-based solar cells opens new opportunities for further improvement of the long-term device performance.

The Influence of Selenization Temperature on the Properties of CuInGaSe2 Thin Film

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Selenization Temperature and Properties of CuInSe2 Films

Influences Of The Selenization Duration On Compositions And Microstructures Of Cigs Absorber

Local Segregation in Cu-In Precursors and Its Effects on Microstructures of Selenized Cuinse2 Thin Films

Study on How the Content of Selenium in the Precursors Influences the Properties of CuInSe2 Thin Films

Unravelling the Intricacies of Selenization in Sequentially Evaporated Cu(In,Ga)Se2 Thin Film Solar Cells on Flexible Substrates

Influence of Annealing Temperature on Electric Properties of CuIn1-xGaxSe2 Thin Films

Influence of Lamination Modes of CuInGa Precursor Films on Composition and Microstructures of Selenized CuInGa Absorber

Optimization of Fabrication Parameters of CuInSe2 Thin Films by DC-Magnetron Sputtering the Metal Precursor Followed by Selenization

Study of Cu–In–Ga Precursor for Cu(In,Ga)Se_2 Thin Film Prepared by the Two-Stage Process

Investigation of CuIn1-xAlxSe2 Thin Film for Solar Cells Prepared by a Selenization Process

Effect of Temperature on Selenization Process of Metallic Cu–In Alloy Precursors

Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors

Phase transform based on temperature distribution by post-sputtering selenization

An investigation on phase transition for as-sputtered Cu 2 ZnSnSe 4 absorbers during selenization

Investigation of Copper Indium Gallium Selenide Material Growth by Selenization of Metallic Precursors

Preparation and properties of compositionally tunable Cu3Sb(Sx,Se1-x)4 thin films

Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell

The Effects of Preheating Temperature on CuInGaSe2/CdS Interface and the Device Performances

Influences of Ga Concentration on Performances of CuInGaSe2 Cells Fabricated by Sputtering-Based Method with Ceramic Quaternary Target