Abstract:CuIn(S,Se)2 thin films were prepared by thermal crystallization of co-sputtered Cu-In alloy precursors in S/Se atmosphere. In-depth compositional uniformity is an important prerequisite for obtaining device-quality CuIn(S,Se)2 absorber thin films. In order to figure out the influence of heat treatments on in-depth composition uniformity of CuIn(S,Se)2 thin films, two kinds of reaction temperature profiles were investigated. One process is “one step profile", referring to formation of CuIn(S,Se)2 thin films just at elevated temperature (e.g. 500 °C). The other is “two step profile", which allows for slow diffusion of S and Se elements into the alloy precursors at a low temperature before the formation and re-crystallization of CuIn(S,Se)2 thin films at higher temperature (e.g. first 250 °C then 500 °C). X-ray diffraction studies reveal that there is a discrepancy in the shape of (112) peak. Samples annealed with “one step profile" have splits on (112) peaks, while samples annealed with “two step profile" have relatively symmetrical (112) peaks. Grazing incident X-ray diffraction and energy dispersive spectrum measurements of samples successively etched in bromine methanol show that CuIn(S,Se)2 thin films have better in-depth composition uniformity after “two step profile" annealing. The reaction mechanism during the two thermal processing was also investigated by X-ray diffraction and Raman spectra.

Effect of Temperature on Selenization Process of Metallic Cu–In Alloy Precursors

Investigation of Chalcopyrite Film Growth: an Evolution of Thin Film Morphology and Structure During Selenization

Effects of different sulfurization conditions on the characterization of CuIn(S x Se 1− x ) 2 thin films

Selenization Temperature and Properties of CuInSe2 Films

The Influence of Selenization Temperature on the Properties of CuInGaSe2 Thin Film

Optimization of Fabrication Parameters of CuInSe2 Thin Films by DC-Magnetron Sputtering the Metal Precursor Followed by Selenization

Phase transform based on temperature distribution by post-sputtering selenization

Structural properties of CuInSe2 films prepared by selenization of metallic precursors on MoNx film substrates

Local Segregation in Cu-In Precursors and Its Effects on Microstructures of Selenized Cuinse2 Thin Films

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Effect of Heat Treatment on the Property of Cuins2 Thin Film Prepared by Chemical Bath Deposition

Preparation of CuInSe2 thin films by selenization of co-sputtered Cu-In precursors using rapid thermal processing

Study on How the Content of Selenium in the Precursors Influences the Properties of CuInSe2 Thin Films

Study of Cu–In–Ga Precursor for Cu(In,Ga)Se_2 Thin Film Prepared by the Two-Stage Process

Investigation into the Thermal Annealing Effects on CuIn(S,Se)2 Thin Films Prepared by Solution Processes

Temperature Dependence of Microstructure and Physical Properties of Cuinse2 Prepared by Rapid Synthesis Reaction

Influence of Thermal Treatments on In-Depth Compositional Uniformity of Cuin(S,Se)(2) Thin Films

Investigation of Copper Indium Gallium Selenide Material Growth by Selenization of Metallic Precursors

EFFECT OF ANNEALING ON THE CuInS2 THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION

Influence Of Annealing Conditions On The Structure And Compositions Of Electrodeposited Cuinse2 Films

Effects of Synthesis Temperature on CuIn(S,Se) 2 Thin Films Prepared by One - Step Evaporation of Cu–In Precursors