Optimization of Fabrication Parameters of CuInSe2 Thin Films by DC-Magnetron Sputtering the Metal Precursor Followed by Selenization

汤会香,严密,张辉,张加友,孙云,薛玉明,杨德仁

DOI: https://doi.org/10.3321/j.issn:0253-4177.2004.06.025

2004-01-01

Abstract:The optimized preparation of CuInSe2 thin films by DC-magnetron sputtering the metal precursor followed by selenization is investigated by means of the four-factor and four-level orthogonal experimental method. In the experiments, four important factors including the ratio of Cu/In, the time of selenization, the temperature of selenization, and the temperature of selenium are changed, and then sixteen samples are fabricated. The electrical properties of the CuInSe2 thin films are studied by the Hall effect measurement system. It is found that the optimized fabrication parameters of CuInSe2 thin films with good electrical properties are that the ratio of Cu/In is 1.133, the time of selenization is 20 min, the temperature of selenization is 420°C, and the temperature of selenium is 200°C. The Hall mobility of the CuInSe2 film prepared under the optional conditions is 3.19 cm2/(V·s). X-ray diffraction (XRD) results indicate that the CuInSe2 thin films are well crystallized, and there is no other phase in the film.