Rear Interface Engineering in Solution‐Processed Submicron Cu(In,Ga)(S,Se)2 Solar Cells on Transparent Sn:In2O3 Back Contact

Yao Gao,Guanchao Yin,Martina Schmid

DOI: https://doi.org/10.1002/admi.202300566

IF: 5.4

2023-09-02

Advanced Materials Interfaces

Abstract:Semi‐transparent CIGSSe solar cells present inferior performance due to the formation of a GaOx barrier layer at the CIGSSe/ITO interface leading to high rear interface recombination. Introducing a Cu‐In‐TU‐DMF interface modification layer before CIGSSe deposition can reduce the recombination at the rear interface of semi‐transparent CIGSSe solar cells. Such interface‐modified submicron CIGSSe absorber leads to an improvement of photovoltaic performance. The parasitic absorption in Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells emerging from the Mo back contact can be significantly reduced by replacing it with tin‐doped indium oxide (ITO). Commonly, an undesirable GaOx layer forms at the CIGSSe/ITO interface during the high‐temperature fabrication process, which has a detrimental effect on photo‐carrier extraction. Here, a Cu‐In‐TU‐DMF (TU: thiourea, DMF: N, N‐Dimethylformamide) intermediate layer for modification of the CIGSSe/ITO interface, which improves the efficiency of submicron CIGSSe solar cells significantly, is reported about. The reference submicron CIGSSe solar cells exhibit inferior performance (2.4% efficiency) and a large open circuit voltage deficit (Voc,def = 815.9 mV) due to a high barrier at the CIGSSe/ITO interface. At the modified rear interface, the recombination is reduced and hence carrier transport and collection are obviously improved. The efficiency of submicron CIGSSe solar cells on ITO with rear interface modification achieves 7.9% with an open circuit voltage of 565.8 mV, a short circuit current density of 23.4 mA cm−2, and a fill factor of 59.5%, as well as a Voc,def of 589.2 mV.

materials science, multidisciplinary,chemistry