Abstract:The widespread use of lead (Pb)-based materials in solar cells poses serious environmental and health risks, particularly through lead contamination. These hazards make the development of Pb-free alternatives a critical priority for safer and more sustainable photovoltaic technologies. This study addresses this pressing need by exploring innovative, non-toxic materials for high-efficiency solar cells. In response, this study introduces a novel, fully inorganic solar cell structure, FTO/ZnO/CIGS/CuSbS 2 /Au, which leverages copper indium gallium (di) selenide (CIGS) as the absorber layer and copper antimony sulfide (CuSbS 2 ) as the hole transport layer (HTL). Our approach is distinguished by the strategic integration of zinc oxide (ZnO) as the electron transport layer (ETL), which, in conjunction with CuSbS 2 , enhances charge transport efficiency and overall device performance. This research innovates by conducting a comprehensive numerical analysis to fine-tune critical parameters such as absorber layer thickness, doping levels, defect densities, and radiative recombination rates. By optimizing these parameters, we significantly improve the photoconversion efficiency of the solar cell. Additionally, we systematically investigate the influence of interface defects, metal back contacts, and temperature variations on device performance, providing new insights into the stability and efficiency of inorganic solar cells. A key mechanism explored in this study is the role of series and shunt resistances in determining the electrical behavior of the solar cell, analyzed through capacitance-voltage (C–V) and capacitance-frequency (C–F) measurements. These analyses reveal the intricate balance between charge carrier dynamics and external resistive factors, further elucidating the operational mechanisms within the cell. Our fully inorganic FTO/ZnO/CIGS/CuSbS 2 /Au solar cell achieves a remarkable power conversion efficiency (PCE) of 32.25 % at room temperature, with a short-circuit current density (J SC ) of 34.77 mA/cm 2 , an open-circuit voltage (V OC ) of 1.10 V, and a fill factor (FF) of 84.33 %. By comparing these results with both experimental and theoretical benchmarks in the field of CIGS solar cells, we demonstrate the competitive edge and profound significance of our lead-free design.

Numerical Simulation of Copper Indium Gallium Diselenide Solar Cell with Ultra-Thin BaSi2 Back Surface Field Layer Using the Non-Toxic In2Se3 Buffer Layer

Performance enhancement of CIGS-based solar cells by incorporating an ultrathin BaSi2 BSF layer

A qualitative Design and optimization of CIGS-based Solar Cells with Sn2S3 Back Surface Field: A plan for achieving 21.83 % efficiency

Design and numerical analysis of CIGS-based solar cell with V2O5 as the BSF layer to enhance photovoltaic performance

Investigation of Back Surface Field Layer for High Efficiency Ultrathin In2S3 based CIGS Solar Cell

High-Efficiency Cu(In,Ga)Se₂ Thin Film Solar Cells Using ZnS and CdS Buffer Layers

Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer

Investigation on the Performance of CIGS/TiO2 Heterojunction Using SCAPS Software for Highly Efficient Solar Cells

Optimized CIGS based solar cell towardsan efficient solar cell: impact of layers thickness and doping

Modeling and optimization of numerical studies on CuSbS 2 thin film solar cell with ∼ 15% efficiency

Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer

Improvement of the CIGS solar cell performance: structure based on a ZnS buffer layer

Optimization of Efficient Copper-Indium-Gallium Di-Selenide Solar Cell

Current Remedy in Ultrathin Crystalline Si Solar Cell by Cu2SnS3 Thin Film toward High Efficiency

Theoretical design and performance evaluation of a lead-free fully inorganic CIGS solar cell with CuSbS 2 as HTL

Enhanced Efficiency of Cu(In,Ga)Se 2 Solar Cells With a Thin CdS Buffer Layer Via a Zn 0.8 Mg 0.2 O Second Buffer Layer

Optoelectronic Effects of Copper–Indium–Gallium–Sulfur (CIGS2)-Solar Cells Prepared by Three-Stage Co-Evaporation Process Technology

Numerical simulation and performance optimization of GeSe based thin film solar cell with NiO as back surface field layer

Investigation of Cu(In, Ga)Se2 solar cell performance with non-cadmium buffer layer using TCAD-SILVACO

Impact of graded CIGS absorber layer on Cd-free CIGS thin-film solar cell performance: Numerical optimization

Numerical Investigation of CuSbS2Thin Film Solar Cell using SCAPS-1D: Enhancement of Efficiency on Experimental Films by Defect Studies