Abstract:A numerical simulation of a single-junction bilayer of CIGS-based solar cell tandem device is presented in this paper. The structure used here is Al:ZnO/CdS/CuIn1-XGaXSe2/CuIn1-YGaYSe2, and the software used is wx-AMPS. As most of the efficient high-performance photovoltaic devices are strongly dependent upon Ga content, the variation of Ga ratio is a necessary approach in the investigation of CIGS solar cells. As a result, different Ga grading profiles have been demonstrated and thoroughly analyzed the different solar cell parameters viz. open-circuit voltage (Voc), short-circuit current density(Jsc), fill factor, external quantum efficiency and efficiency (η) of the above structure under AM 1.5 illumination. At an initial process, we analyzed the single layer of CIGS (CuIn0.69Ga0.31Se2) solar cell device and its output characteristics. In the second step, we have shown the impact of tandem structure with the addition of a second CIGS absorber layer with different Ga concentrations and its improved performance as compared with a single absorber layer device. We also proposed for the first time a solution to the issue of diffusion (unintentional Ga grading) which occurs at the time of annealing at higher temperatures by adding a p-type MoS2 layer in between the bilayer CIGS to limit the diffusion and to achieve the proposed grading. The efficiency of the bilayer device structure with fixed Ga fraction x = (0.31) of the top absorber layer along with Ga fraction y = (0.45) of the bottom absorber layer shows the improved efficiency from 20.56% (single layer) to 23.6% (bilayer). Addition of a p-type MoS2 layer in between the bilayer CIGS further improves the efficiency from 23.6 to 24.17%.

Performance Analysis of Ultrathin Cu(In,Ga)Se2 Solar Cells with Backwall Superstrate Configuration Using AMPS-1D

Investigation on the Performance of CIGS/TiO2 Heterojunction Using SCAPS Software for Highly Efficient Solar Cells

An Analytical Model For Quantum Efficiency And Photocurrent Density Of The Cu(In,Ga)Se-2 Solar Cell

Simulation of Graded Bandgap on the Performance of Back-Wall Superstrate CIGS Solar Cells

Tailored Band Structure of Cu(In,Ga)Se2 Thin-Film Heterojunction Solar Cells: Depth Profiling of Defects and the Work Function.

A qualitative Design and optimization of CIGS-based Solar Cells with Sn2S3 Back Surface Field: A plan for achieving 21.83 % efficiency

Impact of graded CIGS absorber layer on Cd-free CIGS thin-film solar cell performance: Numerical optimization

Numerical simulation on an efficient n-CdS/p-ZnSnN2/p+-Cu2SnS3/p++- CuGaSe2 thin film solar cell

Numerical Simulation of Copper Indium Gallium Diselenide Solar Cell with Ultra-Thin BaSi2 Back Surface Field Layer Using the Non-Toxic In2Se3 Buffer Layer

Semitransparent and Bifacial Ultrathin Cu(In,Ga)Se2 Solar Cells Via a Single-Stage Process and Light-Management Strategy

Investigation of Back Surface Field Layer for High Efficiency Ultrathin In2S3 based CIGS Solar Cell

Design of suppressing optical and recombination losses in ultrathin CuInGaSe2 solar cells by Voronoi nanocavity arrays

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

Structural Analysis of Cu(In1-Xgax)Se-2 Multi-Layer Thin Film Solar Cells

Optimized CIGS based solar cell towardsan efficient solar cell: impact of layers thickness and doping

Bilayer CIGS-based solar cell device for enhanced performance: a numerical approach

GeSe-based hole transport layer for efficient Cu 2 CdSnS 4 heterojunction solar cells: A simulation approach

Analysis of efficiency limiting processes in thin film Cu(In,Ga)(S,Se)2 electrodeposited solar cells

Optimization of CuInGaSSe properties and CuInGaSSe/CdS interface quality for efficient solar cells processed with CuInGa precursors

Mechanism‐Based Approach of CdS/Cu(In,Ga)Se2 (CIGS) Interfaces for CIGS Solar Cells Through Deposition in Different Stages of Continuous Chemical Bath Deposition Reaction: Key to Achieving High Photovoltaic Performance

Design and numerical analysis of CIGS-based solar cell with V2O5 as the BSF layer to enhance photovoltaic performance