An Analytical Model For Quantum Efficiency And Photocurrent Density Of The Cu(In,Ga)Se-2 Solar Cell

Liang-Qi Ouyang,Da-Ming Zhuang,Ming Zhao,Li Guo

2014-01-01

Abstract:An analytical model for the quantum efficiency (EQE) and the photocurrent density (J(ph)) related to the Cu(In,Ga)Se-2 (CIGS) solar cells has been proposed. In order to find methods to improve J(ph), the source and the loss of Jph have been analyzed. The current arising from the depletion region (SCR region) located in the CIGS layer accounts for more than 90% of J(ph) and the recombination loss accounts for nearly half of the total photocurrent density loss. J(ph) is enhanced with the increase of the diffusion length of electrons in CIGS l(n) and the decrease of the back surface recombination rate Sn. The value of Sn has a minor effect on Jph when ln is less than 0.5 mu m. As CIGS solar cells with thinner absorbers need less materials and cost less, the relationship between J(ph) (an important performance parameter) and the CIGS thickness should be analyzed to study whether thinning the absorbers will deteriorate the performance too much. When l(n) is 0.1 mu m, J(ph) is nearly the same whatever the CIGS thickness and Sn change, while when l(n) is 1 mu m, the relationship between J(ph) and the CIGS thickness depends strongly on the value of Sn. Nonmonotonic relationship between J(ph) and the CIGS thickness is found.