An Illumination- and Temperature-Dependent Analytical Model for Copper Indium Gallium Diselenide (CIGS) Solar Cells

Xingshu Sun,Timothy Silverman,Rebekah Garris,Chris Deline,Muhammad Ashraful Alam
DOI: https://doi.org/10.1109/JPHOTOV.2016.2583790
2018-01-31
Abstract:In this paper, we present a physics-based analytical model for CIGS solar cells that describes the illumination- and temperature-dependent current-voltage (I-V) characteristics and accounts for the statistical shunt variation of each cell. The model is derived by solving the drift-diffusion transport equation so that its parameters are physical, and, therefore, can be obtained from independent characterization experiments. The model is validated against CIGS I-V characteristics as a function of temperature and illumination intensity. This physics-based model can be integrated into a large-scale simulation framework to optimize the performance of solar modules as well as predict the long-term output yields of photovoltaic farms under different environmental conditions.
Mesoscale and Nanoscale Physics
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