Numerical simulation and performance optimization of GeSe based thin film solar cell with NiO as back surface field layer

Xiaojian Zhao,Yan Liang,Li Xue,Guijin Li,Fangfang Guo

DOI: https://doi.org/10.1016/j.optmat.2022.112707

IF: 3.754

2022-07-18

Optical Materials

Abstract:Germanium monoselenide (GeSe) has emerged as a viable candidate for absorber material in thin film solar cell (TFSC) due to its favorable material characteristics. Herein, the novel GeSe based TFSC with CdS as buffer layer and NiO as back surface field (BSF) layer has been proposed and its photovoltaic performance has been evaluated theoretically using wxAMPS software. The device output parameters have been assessed by varying thickness and carrier concentration for the GeSe layer, CdS layer and NiO layer, respectively. Moreover, the defect densities in GeSe absorber layer, CdS/GeSe and GeSe/NiO interface layers, and the work function of metal electrode at the cell rear side have been altered to evaluate the photovoltaic characteristics. Conversion efficiency of 31.37% has been obtained for the proposed GeSe-based TFSC with the new architecture under the conditions such as the thicknesses of the CdS layer, GeSe layer and NiO layer are optimized to be 0.03 μm, 0.3 μm and 0.05 μm, respectively; the carrier concentrations of the CdS layer, GeSe layer and NiO layer are optimized to be 10 18 cm −3 , 10 19 cm −3 and 10 20 cm −3 , respectively; the defect densities in the GeSe layer, IDL1, IDL2 both are set to be 10 15 cm −3 . These results suggest that GeSe can be employed as the promising absorber layer to fabricate low-cost and high efficiency TFSC.

materials science, multidisciplinary,optics