Interface-enhanced germanium selenide solar cells comprising an ultrathin and uniform antimony selenide buffer layer via hydrothermal approach

Jing Zhou,Shengwen Yang,Li Gao,Zhenming Qu,Yu Cao,Xiaoming Yu,Xuan Yu,Jian Ni,Jianjun Zhang

DOI: https://doi.org/10.1016/j.solmat.2024.113260

IF: 6.9

2024-11-01

Solar Energy Materials and Solar Cells

Abstract:Germanium selenide (GeSe) is a promising thin film photovoltaic absorber material owing to its excellent optoelectronic properties, high stability, and low toxicity. Interface engineering by introducing an ultrathin antimony selenide (Sb 2 Se 3 ) buffer layer between the CdS electron transport layer and GeSe absorber layer is an effective technique for enhancing solar cell performance. However, the key to this technique is the fabrication of a uniform and smooth Sb 2 Se 3 buffer layer with minimal thickness. In this study, instead of the conventional closed-space sublimation method, a hydrothermal method was employed to slowly grow an Sb 2 Se 3 buffer layer with a thickness of approximately 8 nm. The Se/Na 2 SO 3 molar ratio in the selenium source during the hydrothermal synthesis was adjusted; a molar ratio of 1:2 led to an uneven Sb 2 Se 3 buffer layer thickness, whereas a molar ratio of 1:10 resulted in the formation of Sb 2 O 3 particles on the buffer layer surface. When the Se/Na 2 SO 3 molar ratio was 1:6, a smooth, uniform, dense, and impurity-free Sb 2 Se 3 buffer layer was obtained, achieving the highest efficiency of 3.33 % in a GeSe solar cell. Moreover, GeSe solar cells with hydrothermally grown Sb 2 Se 3 buffer layers demonstrated superior device interface properties and efficiency comparable with those using Sb 2 Se 3 buffer layers deposited via closed-space sublimation. This technique offers an effective method for steadily improving the performance of GeSe solar cells.

materials science, multidisciplinary,physics, applied,energy & fuels