Abstract:Antimony selenide (Sb2Se3) has advantages of low-toxicity, abundant and excellent photoelectric properties. It is widely considered as one of the most promising light-harvesting materials for thin-film solar cells. However, the power conversion efficiency of the Sb2Se3 thin-film solar cell is still far inferior to that of cadmium telluride, copper indium gallium selenium and perovskite solar cells. As is well known, the Sb2Se3 solar cell performance is closely related to the light absorber layer (crystallinity, composition, bulk defect density, etc.), PN heterojunction quality (charge carrier concertation, energy band alignment, interface defect density, etc.) and back-contact barrier formation, which determines the process of carrier generation, excitation, relaxation, transfer and recombination. The low fill factor is one of the core problems that limit further efficiency improvement of Sb2Se3 solar cells, which can be attributed to the high potential barrier at the back contact between the Mo electrode and Sb2Se3 absorption layer. In this work, a heat treatment is applied to the Mo electrode to generate a MoO2 buffer layer. It can be found that this buffer layer can inhibit MoSe2 film growth, exhibiting better Ohmic contact with Sb2Se3, and reducing the back contact barrier of the solar cell. The Sb2Se3 thin film is prepared by an effective combination reaction involving sputtered and selenized Sb precursor. After introducing the MoO2 buffer layer, it can also promote the formation of (hk1) (including (211), (221), (002), etc.) preferentially oriented Sb2Se3 thin films with average grain size over 1 μm. And the ratio of Sb to Se is optimized from 0.57 to 0.62, approaching to the stoichiometric ratio of Sb2Se3 thin film and inhibiting the formation of Vse and SbSe defects. Finally, it enhances the open-circuit voltage (VOC) of solar cells from 0.473 to 0.502 V, the short-circuit current density (JSC) from 22.71 to 24.98 mA/cm2, and the fill factor (FF) from 46.90% to 56.18%, thereby increasing the power conversion efficiency (PCE) from 5.04% to 7.05%. This work proposes a facile strategy for interfacial treatment and elucidates the related carrier transport enhancement mechanism, thus paving a bright avenue to breaking through the efficiency bottleneck of Sb2Se3 thin film solar cells.

Heterostructured CdS Buffer Layer for Sb2Se3 Thin Film Solar Cell

Heterogeneous Nucleation Regulation Amends Unfavorable Crystallization Orientation and Defect Features of Antimony Selenosulfide Film for High‐Efficient Planar Solar Cells

Reactively Sputtered CdS:O Buffer Layers for Substrate Sb2Se3 Solar Cells

Bandgap Tunable CdS:O As Efficient Electron Buffer Layer for High-Performance Sb2Se3 Thin Film Solar Cells

Optimizing Crystal Orientation and Defect Mitigation in Antimony Selenide Thin-Film Solar Cells through Buffer Layer Energy Band Adjustment

All-Vacuum-Processed Sb<sub>2</sub>(S,Se)<sub>3</sub> Thin Film Photovoltaic Devices via Controllable Tuning Seed Orientation

All-Vacuum-Processed Sb-2(S,Se)(3) Thin Film Photovoltaic Devices via Controllable Tuning Seed Orientation

Carrier Transport Enhancement Mechanism in Highly Efficient Antimony Selenide Thin‐Film Solar Cell

Zinc Chloride‐treated Indium Sulfide as Buffer Layer for Cd‐free Antimony Selenide Solar Cells

Zn(O,S) Buffer Layer for in Situ Hydrothermal Sb 2 S 3 Planar Solar Cells

Solution‐Processed Sb2(S, Se)3 Seeds‐Assisted Sb2Se3 Thin Film Growth for High Efficiency Solar Cell

Thermal evaporation–deposited hexagonal CdS buffer layer with improved quality, enlarged band gap, and reduced band gap offset to boost performance of Sb2(S,Se)3 solar cells

Interfacial Engineering Towards Enhanced Photovoltaic Performance of Sb2Se3 Solar Cell

Enhanced charge carrier transport via efficient grain conduction mode for Sb2Se3 solar cell applications

Interface Etching Leads to the Inversion of the Conduction Band Offset Between the CdS/Sb2Se3 Heterojunction and High-Efficient Sb2Se3 Solar Cells

Substrate dependence on (Sb4Se6)n ribbon orientations of antimony selenide thin films: Morphology, carrier transport and photovoltaic performance

High-efficiency Sb2Se3 thin-film solar cells based on Cd(S,O) buffer layers prepared via spin-coating

Back Contact Optimization for Sb<sub>2</sub>Se<sub>3</sub> Solar Cells

Efficient Double Buffer Layer Sb2 (SexS1–x)3 Thin Film Solar Cell Via Single Source Evaporation

Hydrazine Hydrate‐Induced Surface Modification of CdS Electron Transport Layer Enables 10.30%‐efficient Sb2(S,Se)3 Planar Solar Cells

Vertically Aligned One-Dimensional Crystal-Structured Sb 2 Se 3 for High-Efficiency Flexible Solar Cells via Regulating Selenization Kinetics