CIGS bifacial solar cells with novel rear architectures: Simulation point of view and the creation of a digital twin

A.F. Violas,A.J.N. Oliveira,P.A. Fernandes,P.M.P. Salomé,J.P. Teixeira

DOI: https://doi.org/10.1016/j.solmat.2024.112899

IF: 6.9

2024-05-10

Solar Energy Materials and Solar Cells

Abstract:The performance of bifacial Cu(In,Ga)Se 2 (CIGS) cells does not yet reach the one of monofacial cells, with standard Mo rear contacts. By exploring optoelectronic simulations, this study addresses the impact of a transparent conducting oxide layer used as rear contact in CIGS solar cells. These simulations, which aim to create a digital twin of bifacial CIGS solar cells, offer insight into the impact of novel rear contact architectures. It was observed that with an indium tin oxide (ITO) rear contact the CIGS cell performance lacks in comparison to a Mo one due to an electrical barrier, under rear side illumination these devices may only reach 3.9 % in conversion efficiency. The implementation of dielectric rear passivation schemes have great performance benefits in cells with Mo rear contacts. Therefore, the same passivation strategy in ITO contacts is discussed and additional novel architectures are proposed, from which a design of alternated lines between dielectric and 15 nm Mo layers on ITO showed promising results. Such rear architectures aim to achieve i) a highly transparent rear contact, ii) an ohmic-like behaviour with CIGS, and iii) a low defective interface with rear passivation. The selenization of the complete 15 nm Mo in the proposed novel architecture during the CIGS growth was considered, resulting in transmittance values above 70 % and, notably, reaching the transparency of bare ITO in the infrared range. Such rear architecture may provide for bifacial CIGS solar cells with conversion efficiency values surpassing 20 and 15 % for front and rear side illumination, respectively, allowing to fully exploit bifaciality.

materials science, multidisciplinary,physics, applied,energy & fuels