Pulsed laser deposition of single-crystalline Cu 7 In 3 /CuIn 0.8 Ga 0.2 Se 2 core/shell nanowires

Yu Zhao,Hui Li,Yan-Yan Zhu,Lei-Lei Guan,Yan-Li Li,Jian Sun,Zhi-Feng Ying,Jia-Da Wu,Ning Xu
DOI: https://doi.org/10.1186/1556-276X-9-650
2014-01-01
Nanoscale Research Letters
Abstract:Single-crystalline Cu 7 In 3 /CuIn 0.8 Ga 0.2 Se 2 (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm. PACS 61.46. + w; 61.41.e; 81.15.Fg; 81.07.b
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