Abstract:Abstract We report a comprehensive study of the growth dynamics in highly periodic, composition tunable InAsSb nanowire (NW) arrays using catalyst-free selective area molecular beam epitaxy. Employing periodically patterned SiO 2 -masks on Si (111) with various mask opening sizes (20–150 nm) and pitches (0.25–2 μ m), high NW yield of >90% (irrespective of the InAsSb alloy composition) is realized by the creation of an As-terminated 1 × 1-Si(111) surface prior to NW nucleation. While the NW aspect ratio decreases continually with increasing Sb content ( x Sb from 0% to 30%), we find a remarkable dependence of the aspect ratio on the mask opening size yielding up to ∼8-fold increase for openings decreasing from 150 to 20 nm. The effects of the interwire separation (pitch) on the NW aspect ratio are strongest for pure InAs NWs and gradually vanish for increasing Sb content, suggesting that growth of InAsSb NW arrays is governed by an In surface diffusion limited regime even for the smallest investigated pitches. Compositional analysis using high-resolution x-ray diffraction reveals a substantial impact of the pitch on the alloy composition in homogeneous InAsSb NW arrays, leading to much larger x Sb as the pitch increases due to decreasing competition for Sb adatoms. Scanning transmission electron microscopy and associated energy-dispersive x-ray spectroscopy performed on the cross-sections of individual NWs reveal an interesting growth-axis dependent core–shell like structure with a discontinuous few-nm thick Sb-deficient coaxial boundary layer and six Sb-deficient corner bands. Further analysis evidences the presence of a nanoscale facet at the truncation of the (111)B growth front and {1-10} sidewall surfaces that is found responsible for the formation of the characteristic core–shell structure.

InAs/GaSb Core-Shell Nanowires Grown on Si Substrates by Metal-Organic Chemical Vapor Deposition

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

GaAsSb/InAs Core-Shell Nanowires Grown by Molecular-Beam Epitaxy

Formation of GaAs/GaSb Core-Shell Heterostructured Nanowires Grown by Molecular-Beam Epitaxy

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

New Growth Mechanism of InAs-GaSb Core-Shell Nanowires with Polygonal Triangular Pyramids and Quantum Dots Grown by MOCVD

The Self-Seeded Growth of InAsSb Nanowires on Silicon by Metal-Organic Vapor Phase Epitaxy

Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates

A Systematic Study on Self-Catalyzed Growth of InAs/GaSb Axial Heterostructured Nanowires by MOCVD

Self-induced Antimony Compositional Variation GaAs/Ga(As)Sb Core-Shell Nanowires by Molecular Beam Epitaxy

Growth of Au-assisted GaAs/AlGaAs Core-Shell Nanowires by Metalorganic Chemical Vapor Deposition

Defect-Free GaAs/AlGaAs Core–Shell Nanowires on Si Substrates

Growths of InAs/GaAs and InAs/In x Ga 1- x As/GaAs nanowire heterostructures

Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy

Two-Step Fabrication of Self-Catalyzed Ga-Based Semiconductor Nanowires on Si by Molecular-Beam Epitaxy

Growths of InAs/GaAs and InAs/In X Ga1-x As/GaAs Nanowire Heterostructures

3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition.

Controllable Growth and Optical Properties of Inp and Inp/Inas Nanostructures on the Sidewalls of Gaas Nanowires

The Self-Catalyzed Growth of GaAsSb Nanowires on a Si (111) Substrate Using Molecular-Beam Epitaxy