Abstract:Epitaxial III–V semiconductor nanowires (NWs) have attracted considerable attention due to their potential applications in nanoelectronics and optoelectronics. Through the vapour–liquid–solid mechanism the growth of III–V NWs has been successfully realized. Nevertheless, the evolution of epitaxial NWs is poorly understood so far although such knowledge is vital for designing and manufacturing future NW devices. In this Communication, we present a systematic investigation of the Au catalyst-assisted growth of epitaxial InAs NWs on GaAs{111}B substrates. We find that the Au catalysts preferentially retain contact with GaAs, leading to the formation of horizontal InAs traces on the GaAs substrate in the initial growth stage. Vertical InAs NWs initiate at points where elongated traces intersect. This novel NW evolution phenomenon is attributed to the interfacial energy between the catalyst and InAs being higher than that between the catalyst and GaAs. The unique physical characteristics of InAs have made it an ideal electron-confinement material in quantum wells, quantum dots, and NW heterostructures. For this reason, InAs NWs are predicted to be of great future importance and are chosen as the subject of this study. In fact, considerable effort has been devoted to InAs NW growth from as early as the 1990s. It has been found that, unlike their quantum-well and quantum-dots counterparts, epitaxial InAs NWs are

Catalyst-free Growth of Lateral InAs Nanowires

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Palladium catalyzed defect-free zinc-blende structured InAs nanowires

Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks.

Growth of Defect-Free InAs Nanowires Using Pd Catalyst

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

Large‐area, Catalyst‐free Heteroepitaxy of InAs Nanowires on Si by MOVPE

Dislocation-free axial InAs-on-GaAs nanowires on silicon

Self‐catalysed Growth of InAs Nanowires on Bare Si Substrates by Droplet Epitaxy

Polarity Driven Simultaneous Growth of Free-Standing and Lateral GaAsP Epitaxial Nanowires on GaAs (001) Substrate

Defect-Free <110> Zinc-Blende Structured InAs Nanowires Catalyzed by Palladium

Axiotaxy Driven Growth of Belt-Shaped InAs Nanowires in Molecular Beam Epitaxy

Self-Catalyzed Gaasp Nanowires Grown On Silicon Substrates By Solid-Source Molecular Beam Epitaxy

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Epitaxial nanowires Evolution of Epitaxial InAs Nanowires on GaAs ( 111 ) B * *

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Graphitic Platform for Self-Catalysed InAs Nanowires Growth by Molecular Beam Epitaxy

Growth of Straight InAs-on-GaAs Nanowire Heterostructures