Abstract:Here, we demonstrate an approach that provides a precise control of the dimension of InAs from one-dimensional nanowires to wafer-scale free-standing two-dimensional nanosheets, which have a high degree of crystallinity and outstanding electrical and optical properties, using molecular-beam epitaxy by controlling catalyst alloy segregation. In our approach, two-dimensional InAs nanosheets can be obtained directly from one-dimensional InAs nanowires by silver-indium alloy segregation, which is much easier than all previously reported method, such as traditional buffering technique and select area epitaxial growth. Detailed transmission electron microscopy investigations provide a solid evidence that the catalyst alloy segregation is the origination of the InAs dimensional transformation from one-dimensional nanowires to two-dimensional nanosheets, and even to three-dimensional complex crosses. Using this method, we find that the wafer-scale free-standing InAs nanosheets can be grown on various substrates including Si, MgO, sapphire and GaAs etc. The InAs nanosheets grown at high temperature are pure phase single crystals and have a high electron mobility and a long time-resolved THz kinetics lifetime. Our work will open up a conceptually new and general technology route toward the effective controlling the dimension of the low-dimensional III-V semiconductors. It may also enable the low-cost fabrication of free-standing nanosheet-based devices on an industrial scale.

Au-catalysed Free-Standing Wurtzite Structured InAs Nanosheets Grown by Molecular Beam Epitaxy

High-quality Epitaxial Wurtzite Structured InAs Nanosheets Grown in MBE.

Axiotaxy Driven Growth of Belt-Shaped InAs Nanowires in Molecular Beam Epitaxy

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Defect-Free <110> Zinc-Blende Structured InAs Nanowires Catalyzed by Palladium

Free-standing InAs Nanobelts Driven by Polarity in MBE.

Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale

Catalyst-free Growth of Lateral InAs Nanowires

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

High-Density, Defect-Free, and Taper-Restrained Epitaxial GaAs Nanowires Induced from Annealed Au Thin Films

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

In Situ TEM Observation of the Vapor–solid–solid Growth of <001̄> InAs Nanowires

Nonpolar GaAs Nanowires Catalyzed by Cu 5 As 2 : Insights into As Layer Epitaxy

Epitaxial nanowires Evolution of Epitaxial InAs Nanowires on GaAs ( 111 ) B * *

Large‐area, Catalyst‐free Heteroepitaxy of InAs Nanowires on Si by MOVPE

Synthesis of InAs nanowires via a low-temperature solvothermal route.

Post-growth shaping and transport anisotropy in 2D InAs nanofins

All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD

Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD