Abstract:Band gaps are one of the most important parameters of semiconductor materials for their optoelectronic applications since they determine the spectral features of absorptions and emission processes [1,2]. Due to the limited band gaps of natural semiconductors, alloying and heterostructured semiconductors with different band gaps have long been the standard methods of achieving semiconductor structures with new band gaps and functions [3,4]. In this talk, I will report our recent progress on the band gap engineering of 1D semiconductor nanowires and 2D atomically thin layered materials through controlled vapor growth. Using some examples, I will show how to realize composition graded and interface sharped low dimensional semiconductor heterostructures through composition controlled band gap modulation. The achieved band gap engineered nanostructures can give continuously tuned or white light emission, and can be used to realize multi-color nanolasers, wavelength splitter, asymmetric waveguiding and high-performance photodetectors etc [5-7]. References [1] Hong Zhou, Shuangping Yuan, Anlian Pan et al., Vapor Growth and Tunable Lasing of Band Gap Engineered Cesium Lead Halide Perovskite Micro/Nanorods with Triangular Cross Section. ACS Nano, 2017, 11 (2), pp 1189-1195. [2] Honglai Li, Xueping Wu, Anlian Pan et al., Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution, ACS Nano, 2017, 11, 961-967. [3] Xidong Duan, Anlian Pan, Xiangfeng Duan et al., Synthesis of WS2xSe2–2x Alloy Nanosheets with Composition-Tunable Electronic Properties, Nano Lett. 2016, 16 (1), pp 264-269. [4] Xidong Duan, Anlian Pan, Xiangfeng Duan et al.. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges, Chem. Soc. Rev., 2015, 44, 8859-8876. [5] Honglai Li, Anlian Pan, Xiangfeng Duan et al., Lateral growth of composition graded atomic layer MoS2(1-x)Se2x nanosheets, J. Am. Chem. Soc., 2015, 137, 5284-5287. [6] Xidong Duan, Anlian Pan, Xiangfeng Duan et al., Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions, Nature Nanotechnology, 2014, 9,1024-1030. [7] Pengfei Guo, Xiujuang Zhuang, Anlian Pan et al., Semiconductor Alloy Nanoribbon Lateral Heterostructures for High-performance Photodetectors, Adv. Mater., 2014, 26, 2844-2849.

Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy

Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy

Growth of Nano-Structures on Composition-Modulated Inalas Surfaces

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy

<i>In Situ</i> Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Self-catalyzed growth of sub-25-nm-diameter InAs nanowire arrays on Si patterned substrate

Growth and Characterization of Straight Inas/Gaas Nanowire Heterostructures on Si Substrate

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

(Invited) Band Gap Engineering and Heterostructures of Low Dimensional Semiconductors

Control of the crystal structure of InAs nanowires by tuning contributions of adatom diffusion.

Au-catalysed Free-Standing Wurtzite Structured InAs Nanosheets Grown by Molecular Beam Epitaxy

Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks.

From Twinning to Pure Zincblende Catalyst-Free Inas(Sb) Nanowires

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

High-quality Epitaxial Wurtzite Structured InAs Nanosheets Grown in MBE.

Realization of Vertical GaAs/InAs Nanowire Heterostructures on Si Substrate

Controlled Synthesis of Pure-Phase GaAs Nanowires through Shear Tension

Post-growth shaping and transport anisotropy in 2D InAs nanofins