Abstract:In recent years, quasi-1D semiconductor nanowires have attracted significant research interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III–V compound semiconductor structure with a narrow band gap, shows high electron mobility and high absorption from the visible to the mid-wave infrared (MWIR), holding promise for room-temperature high-performance infrared photodetectors. Therefore, the material growth, device preparation and performance characteristics have attracted increasing attention, enabling high-sensitivity InAs nanowire photodetector from the visible to the MWIR at room temperature. This review starts by discussing the growth process of the low-dimensional structure and elementary properties of the material, such as the crystalline phase, mobility, morphology, surface states and metal contacts. Then, three solutions, including the visible-light-assisted infrared photodetection technology, vertical nanowire-array technology and band engineering by the growth of InAsSb nanowires with increasing Sb components, are elaborated to obtain longer cut-off wavelength MWIR photodetectors based on single InAs nanowire and its heterojunction structure. Finally, the potential and challenges of the state-of-the-art optoelectronic technologies for InAs nanowire MWIR photodetectors are summarized and compared, and preliminary suggestions for the technical development route and prospects are presented. This review mainly delineates the research progress of material growth, device fabrication and performance characterization of InAs nanowire MWIR photodetectors, providing a reference for the development of the next-generation high-performance photodetectors over a wide spectrum range.

Self-catalyzed growth of sub-25-nm-diameter InAs nanowire arrays on Si patterned substrate

Effect of Nanohole Size on Selective Area Growth of InAs Nanowire Arrays on Si Substrates

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Terrace-confined guided growth of high-density ultrathin silicon nanowire array for large area electronics

Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale

Ultra-Confined Catalytic Growth Integration of Sub-10 Nm 3D Stacked Silicon Nanowires Via a Self-Delimited Droplet Formation Strategy.

Large‐area, Catalyst‐free Heteroepitaxy of InAs Nanowires on Si by MOVPE

High-fidelity Moulding Growth and Cross-section Shaping of Ultrathin Monocrystalline Silicon Nanowires

A Nanoscale Technique Of The Assembly Approach For Inas Nanowire Nano Device

Nanoscale Opening Fabrication on Si (111) Surface from Sio2 Barrier for Vertical Growth of Iii-V Nanowire Arrays

Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap

OS1503 Development of Highly Ordered Silicon Nanowire Array

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

<i>In Situ</i> Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires

Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning.