Abstract:We report a systematic study on the correlation of the electrical transport properties with the crystal phase and orientation of single-crystal InAs nanowires (NWs) grown by molecular-beam epitaxy. A new method is developed to allow the same InAs NW to be used for both the electrical measurements and transmission electron microscopy characterization. We find both the crystal phase, wurtzite (WZ) or zinc-blende (ZB), and the orientation of the InAs NWs remarkably affect the electronic properties of the field-effect transistors based on these NWs, such as the threshold voltage (VT), ON-OFF ratio, subthreshold swing (SS) and effective barrier height at the off-state (ΦOFF). The SS increases while VT, ON-OFF ratio, and ΦOFF decrease one by one in the sequence of WZ ⟨0001⟩, ZB ⟨131⟩, ZB ⟨332⟩, ZB ⟨121⟩, and ZB ⟨011⟩. The WZ InAs NWs have obvious smaller field-effect mobility, conductivities, and electron concentration at VBG = 0 V than the ZB InAs NWs, while these parameters are not sensitive to the orientation of the ZB InAs NWs. We also find the diameter ranging from 12 to 33 nm shows much less effect than the crystal phase and orientation on the electrical transport properties of the InAs NWs. The good ohmic contact between InAs NWs and metal remains regardless of the variation of the crystal phase and orientation through temperature-dependent measurements. Our work deepens the understanding of the structure-dependent electrical transport properties of InAs NWs and provides a potential way to tailor the device properties by controlling the crystal phase and orientation of the NWs.

<i>In Situ</i> Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

From Twinning to Pure Zincblende Catalyst-Free Inas(Sb) Nanowires

Phase-Coherent Transport And Spin Relaxation In Inas Nanowires Grown By Molecule Beam Epitaxy

Large-composition-range pure-phase homogeneous InAs$_{1-x}$Sb$_x$ nanowires

Large Zero Bias Peaks and Dips in a Four-Terminal Thin InAs-Al Nanowire Device

Inas Self-Assembled Nanostructures Grown on Inp(001)

Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion

Retraction Note: Epitaxy of Advanced Nanowire Quantum Devices

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires

Epitaxy of Advanced Nanowire Quantum Devices

Self-catalyzed growth of sub-25-nm-diameter InAs nanowire arrays on Si patterned substrate

Crossover from Coulomb Blockade to Ballistic Transport in InAs Nanowire Devices

InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers

Sb-Induced Phase Control of Inassb Nanowires Grown by Molecular Beam Epitaxy